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verified SJR 0,182 · Q4 • database Scopus / SJR & Web of Science & DOAJ indexed
Active and Passive Electronic Components
United States · John Wiley and Sons Ltd
workspace_premium Q4 — Electronic, Optical and Magnetic Materials verified Plan S Compliant visibility_off Single blind Peer Review lock_open Open Access · DOAJ

Active and Passive Electronic Components

Active and Passive Electronic Components is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 26. It is an CC BY Journal with a Single blind Peer Review review system, and It has a price of 922,5 €. The scope of the journal is focused on transistors, integrated circuits, semiconductor materials, thick-film materials, capacitors, solid-state memories. It has an SJR impact factor of 0,182 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,182.

ISSN: 0882-7516
Publisher: John Wiley and Sons Ltd
Category: Electronic, Optical and Magnetic Materials
Indexation: verifiedScopus / SJR verifiedWeb of Science verifiedDOAJ
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schedule CountryOfPapers database fields
SJR Impact Factor trending_up
0,182 Q4
H-index 26
Acceptance rate pie_chart
39%
Source Acceptance_Rate
Time to publication hourglass_top
13 weeks
Field Average_time_publication_weeks
Publication cost (APC) payments
923 € Open Access
Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science DOAJ

SJR Impact

0,182

H-index

26

Docs (year)

3

Docs 3y

10

Total refs

102

Cites 3y

12

Citable 3y

10

Cites/Doc 2y

1.33

Ref/Doc

34.0

Immediate OA

922,5 €

Embargoed OA

NPD

Non OA / Submission

- €

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Best articles by citations

A Very Compact and Sharp Roll-Off Low-Pass Filter with Four Transmission Zeros

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Y-Function Analysis of the Low Temperature Behavior of Ultrathin Film FD SOI MOSFETs

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Analytical Model of Random Variation in Drain Current of FGMOSFET

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Analysis of the Coupling Coefficient in Inductive Energy Transfer Systems

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Analysis of Random Variation in Subthreshold FGMOSFET

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Analysis of Kink Reduction in SOI MOSFET Using Selective Back Oxide Structure

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Analog Low-Voltage Current-Mode Implementation of Digital Logic Gates

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An Iterative Decomposed Piecewise-Linear Model Description

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AlN/GaN-Based MOS-HEMT Technology: Processing and Device Results

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All-Pass Filter Based Linear Voltage Controlled Quadrature Oscillator

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Active and Passive Realization of Fractance Device of Order 1/2

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Active and Passive Microwave Devices and Circuits

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