ISSN: 1000-7032

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Chinese Journal of Luminescence Q4 Unclaimed

Chines Academy of Sciences China

Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Chinese Journal of Luminescence is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Condensed Matter Physics with an H index of 18. It has an SJR impact factor of 0,192 and it has a best quartile of Q4. It has an SJR impact factor of 0,192.

Type: Journal

Type of Copyright:

Languages:

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q4) Electronic, Optical and Magnetic Materials (Q4) Radiation (Q4)

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

0,192

SJR Impact factor

18

H Index

201

Total Docs (Last Year)

540

Total Docs (3 years)

9500

Total Refs

589

Total Cites (3 years)

540

Citable Docs (3 years)

1.3

Cites/Doc (2 years)

47.26

Ref/Doc

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Aims and Scope

Best articles by citations

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High-efficiency Flexible Organic Solar Cells with UV-ozone Treated Silver Modification ITO Electrode

Synthesis and Properties of 1,1-bis (benzo imidazole-2-yl)-2-(N-ethyl carbazole-3-yl) Ethylene

Luminescence and Mechanism of Energy Transfer of Er3+/Tm3+-codoped Ga5Ge20Sb10S65Glass

Hydrogen Bond Effect on Luminescence Properties of Isophorone-based Emitter

Thermal Characteristics Analysis of C-mount Sink Package Laser and Optimization of Heat Sink Structure

High-efficiency Phosphorescent Organic Light-emitting Devices Based on Bipolar Host

Preparation of Eu2+ Activated Barium Phosphosilicate Phosphors with Two-color Emission by A New Two-step Method

Realization of UVB Lasing in High Quality Cubic ZnMgO Films

White Organic Light Emitting Device Based on [NPB+Zn(4-TfmBTZ)-2] Electroplex

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Effect of Quantum Well Structure on The Efficiency Droop of V-pits-containing InGaN/GaN Blue LED

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Mode Competition in The Proton Implanted VCSEL by Injected Current

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