verified SJR 0,116 · Q4 • database DOAJ indexed

United States · Hindawi Publishing Corporati...

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Advances in OptoElectronics

Advances in OptoElectronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 22. It is an CC BY Journal with a Single blind Peer Review review system, and It has a price of 922,5 €. The scope of the journal is focused on optoelectronics. It has an SJR impact factor of 0,116 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,116.

ISSN: 1687-563X

Publisher: Hindawi Publishing Corporation

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedDOAJ

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,116 Q4

H-index 22

Acceptance rate pie_chart

39%

Source Acceptance_Rate

Time to publication hourglass_top

11 weeks

Field Average_time_publication_weeks

Publication cost (APC) payments

923 € Open Access

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

DOAJ

SJR Impact

0,116

H-index

Docs (year)

Docs 3y

Total refs

Cites 3y

Citable 3y

Cites/Doc 2y

Ref/Doc

0.0

Immediate OA

922,5 €

Embargoed OA

NPD

Non OA / Submission

- €

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Best articles by citations

Application of M Sequence Family Measurement Matrix in Streak Camera Imaging

Zinc Selenide-Based Schottky Barrier Detectors for Ultraviolet-A and Ultraviolet-B Detection

Electrodes for Microfluidic Integrated Optoelectronic Tweezers

Dye-Sensitized Solar Cells Based on High Surface Area Nanocrystalline Zinc Oxide Spheres

Domain-Reversed Lithium Niobate Single-Crystal Fibers are Potentially for Efficient Terahertz Wave Generation

Dispersion Engineered Silicon Nanocrystal Slot Waveguides for Soliton Ultrafast Optical Processing

Detection of an Optical Signal Using Difference Frequency Generation in a Periodically PoledLiTaO3Microwave Waveguide

Design of Matched Absorbing Layers for Surface Plasmon-Polaritons

Design and Optimization of Polarization Splitting and Rotating Devices in Silicon-on-Insulator Technology

Controlled On-Chip Single-Photon Transfer Using Photonic Crystal Coupled-Cavity Waveguides

Conditions of Perfect Imaging in Negative Refraction Materials with Gain

CdS-Sensitized ZnO Nanorod Photoelectrodes: Photoelectrochemistry and Photoinduced Absorption Spectroscopy

SHOW MORE ARTICLES

Broadband Enhancement of Optical Frequency Comb Using Cascaded Four-Wave Mixing in Photonic Crystal Fiber

1 ML Wetting Layer upon Ga(As)Sb Quantum Dot (QD) Formation on GaAs Substrate Monitored with Reflectance Anisotropy Spectroscopy (RAS)

Application of CBD-Zinc Sulfide Film as an Antireflection Coating on Very Large Area Multicrystalline Silicon Solar Cell

Anisotropic Left-Handed and¬µ-Negative Slab Waveguides: Physics and Device Applications

Analysis of the Optical Properties of Screen-Printed and Aerosol-Printed and Plated Fingers of Silicon Solar Cells

Analysis of Plasmonic Waveguides and Gratings Using Implicit Finite-Difference Methods

An Optically Controlled 3D Cell Culturing System

Advances in High-Efficiency III-V Multijunction Solar Cells

A Viable Passive Optical Network Design for Ultrahigh Definition TV Distribution

A Practical Method to Design Reflector-Based Light-Emitting Diode Luminaire for General Lighting

A Microring Temperature Sensor Based on the Surface Plasmon Wave

A Grooming Nodes Optimal Allocation Method for Multicast in WDM Networks

FAQs

Advances in OptoElectronics has an SJR of 0,116 (best quartile Q4) in the CountryOfPapers database.

Immediate OA APC is 922,5 EUR.

The acceptance rate recorded for Advances in OptoElectronics is 39%.

Advances in OptoElectronics

Metrics

Name good journals. Call out predatory ones.

Researcher reviews

Best articles by citations

FAQs

What is the SJR of Advances in OptoElectronics?

What is the APC / publication cost?

What is the acceptance rate?