ISSN: 1882-0778

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Applied Physics Express Q2 Unclaimed

Japan Society of Applied Physics Japan

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Applied Physics Express is a journal indexed in SJR in Physics and Astronomy (miscellaneous) and Engineering (miscellaneous) with an H index of 110. It has an SJR impact factor of 0,487 and it has a best quartile of Q2. It has an SJR impact factor of 0,487.

Applied Physics Express focuses its scope in these topics and keywords: magnetic, semiconducting, thermal, conductivity, friction, quantum, force, roomtemperature, disulfide, diodeshigh, ...

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Categories: Engineering (miscellaneous) (Q2) Physics and Astronomy (miscellaneous) (Q2)

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Metrics

0,487

SJR Impact factor

110

H Index

313

Total Docs (Last Year)

1184

Total Docs (3 years)

10277

Total Refs

2458

Total Cites (3 years)

1178

Citable Docs (3 years)

2.05

Cites/Doc (2 years)

32.83

Ref/Doc

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Aims and Scope

Best articles by citations

Influence of double pulse ablation on the film topography in picosecond pulsed laser deposition of nickel

Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

Semiconductor THz microsensors based on ultrahigh-contrast T-shape patterned interferometers

Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam deposition

Photo-induced meta-stable polar conformations in polystyrene microspheres revealed by time-resolved SHG microscopy

Characterization of SiNx/AlN passivation stack with epitaxial AlN grown on AlGaN/GaN heterojunctions by plasma-enhanced atomic layer deposition

Magnetic properties of ferrimagnetic Tb/CoFeB/MgO films

High-energy dissipative soliton resonance and rectangular noise-like pulse in a figure-9 Tm fiber laser

Fast-neutron irradiation effects on monolayer MoS2

Spin transport in antimony-doped germanium detected using vertical spin-valve structures

A self-calibration method with high-accuracy and low-cost for large-area motion stage based on digital grating projection mode

Fabrication of nanostructures with complex spatial frequency via laser-focused atomic deposition

SHOW MORE ARTICLES

Photocurable chemically-amplified positive-tone ultraviolet resist for multi lithography process

Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs

Theoretical prediction of maximum Curie temperatures of Fe-based dilute magnetic semiconductors by first-principles calculations

Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates

Reducing photodamage in optical trapping of individual cells in living zebrafish

Fabrication and characterization of spin-polarized Co2MnGa field emission electron source

The effects of gamma-ray irradiation on graphene/n-Si Schottky diodes

High-performance lateral GaN Schottky barrier diode on silicon substrate with low turn-on voltage of 0.31 V, high breakdown voltage of 2.65 kV and high-power figure-of-merit of 2.65 GW cm-2

Characterization of spectral broadening and contrast enhancement in cross-polarized wave generation based on gadolinium gallium garnet crystal

Polyimide-derived laser-induced porous graphene-incorporated microwave resonator for high-performance humidity sensing

Fabrication of photonic crystal structures by tertiary-butyl arsine-based metal-organic vapor-phase epitaxy for photonic crystal lasers

Self-formation of ultrahigh-density (1012cm-2) InAs quantum dots on InAsSb/GaAs(001) and their photoluminescence properties