verified SJR 0,393 · Q3 • database Scopus / SJR & Web of Science & DOAJ indexed

United States · Electrochemical Society Inc.

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ECS Journal of Solid State Science and Technology

ECS Journal of Solid State Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials with an H index of 75. It has an SJR impact factor of 0,393 and it has a best quartile of Q3. It has an SJR impact factor of 0,393.

ISSN: 2162-8769

Editorial: Electrochemical Society Inc.

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science verifiedDOAJ

Unclaimed profile — some fields may be incomplete.

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schedule Datos CoP · solo campos en BD

SJR Impact Factor trending_up

0,393 Q3

H-index 75

Tasa de Aceptación pie_chart

29% Selectiva

Fuente Acceptance_Rate

Tiempo a publicación hourglass_top

NPD

Campo Sin dato

Coste de Publicación (APC) payments

NPD Subscription

Ruta Non-OA NPD

Metrics

Campos Scimago / CoP — sin series inventadas

Scopus / SJR Web of Science DOAJ

SJR Impact

0,393

H-index

Docs (year)

408

Docs 3y

1529

Total refs

19681

Cites 3y

3275

Citable 3y

1527

Cites/Doc 2y

2.16

Ref/Doc

48.24

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Chemically Deposited SnSe Thin Films: Thermal Stability and Solar Cell Application

Very Low Temperature Epitaxy of Heavily In Situ Phosphorous Doped Ge Layers and High Sn Content GeSn Layers

Effect of Conditioning Downforce and Pad Break-In Time on Pad Surface Micro-Texture

Effect of Conditioner Type and Downforce, and Pad Break-In Time, on Pad Surface Micro-Texture in Chemical Mechanical Planarization

Editors' Choice - Stability of Unstable Perovskites: Recent Strategies for Making Stable Perovskite Solar Cells

Editors' Choice - Rb2SiF6:Mn4+and Rb2TiF6:Mn4+Red-Emitting Phosphors

Design of High Speed and Low-Power Ring Oscillator Circuit in Recessed Source/Drain SOI Technology

Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation

Current Stage of the Investigation of the Composition of Oxygen Precipitates in Czochralski Silicon Wafers

Crystallized Indium-Tin Oxide (ITO) Thin Films Grown at Low Temperature onto Flexible Polymer Substrates

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Communication - CMOS Thin-Film Transistors via Xe Flash-Lamp Crystallization of Patterned Amorphous Si

SHOW MORE ARTICLES

Communication - An Intense Broadband Sensitized Near-Infrared Emitting GdAl3(BO3)4:Ce3+,Yb3+ Phosphor

A Compact Noise Model for C-CNTFETs

Chemical and Mechanical Properties of Cu Surface Reaction Layers in Cu-CMP to Improve Planarization

Characterization of Grapho-Silicidation on n+4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices

Blue Light-Emitting Diode Phosphors Based upon Oxide, Oxyhalide, and Halide Hosts

Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition?

Atomic Layer Etching: An Industry Perspective

Arsenic Formation on GaAs during Etching in HF Solutions: Relevance for the Epitaxial Lift-Off Process

Applications of Highly Bright PbS Quantum Dots to Non-Invasive Near-Infrared Fluorescence Imaging in the Second Optical Window

Annealing Response of Monolayer MoS2 Grown by Chemical Vapor Deposition

AlN-AlN Layer Bonding and Its Thermal Characteristics

A Review of Hydrophilic Silicon Wafer Bonding

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