ISSN: 0020-7217

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International Journal of Electronics Q3 Unclaimed

Taylor and Francis Ltd. United Kingdom

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International Journal of Electronics is a journal indexed in SJR in Electrical and Electronic Engineering with an H index of 56. It has a price of 2395 €. It has an SJR impact factor of 0,314 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,314.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q3)

Price

2395 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

0,314

SJR Impact factor

56

H Index

199

Total Docs (Last Year)

314

Total Docs (3 years)

5862

Total Refs

588

Total Cites (3 years)

314

Citable Docs (3 years)

1.96

Cites/Doc (2 years)

29.46

Ref/Doc

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Aims and Scope

Best articles by citations

Novel architecture for two-dimensional high throughput rate real-time discrete cosine transform and the VLSI design

An adiabatic quaternary logic circuit

Bounds on bipolar transistor base transit time

Realization of current-mode filters using single FTFN

Electrical and photovoltaic properties of PbS-CdSe heterojunctions†

Determining the accuracy of TLM in simulating the behaviour of resonant cavities with arbitrary dielectric loading

A macro model in SMART SPICE to study the MOSFET degradations with CP technique

Reducing loss in tunable dielectric multilayer frequency selective structures

A high efficiency and wide bandwidth class D switching audio power amplifier with improved output stage and current mode control

CMOS design of the Hao-Vandewalle model of neural associative memory

A new sensorless single-phase to three-phase converter with unity power factor and sinusoidal input and output currents

Design of a synchronous decade down counter†

SHOW MORE ARTICLES

Realization of voltage and current-mode transfer functions using unitygain cells

Hybrid-mode helix-loading effects on gyro-travelling-wave tubes

Application of asymptotic waveform evaluation for time-domain analysis of nonlinear circuits

High-speedmonolithicallyintegratedMSM-FETphotoreceiver based on GaAs/InGaAs strained layer superlattice

Eigen-approach for wide-band interference suppression

CMOS voltage controlled floating resistor

The electronic ballast circuit and low pressure lamps

Simple and accurate effective side length expression obtained by using a modified genetic algorithm for the resonant frequency of an equilateral triangular microstrip antenna

Hierarchical robust test generation for CMOS circuit stuck-open faults

Classifications and graph-based representations of switching functions using a novel complex spectral technique

Analysis of phase and intermodulation distortion of a travelling-wave tube

On the characteristics of polycrystalline-silicon thin-film transistors; two-dimensional numerical analysis