verified SJR 0,125 · Q4 • database Scopus / SJR indexed

Singapore · World Scientific Publishing...

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International Journal of High Speed Electronics and Systems

International Journal of High Speed Electronics and Systems is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 28. It has an SJR impact factor of 0,125 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,125.

ISSN: 0129-1564

Publisher: World Scientific Publishing Co. Pte Ltd

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR

open_in_new Portal NPD menu_book Guidelines NPD

schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,125 Q4

H-index 28

Acceptance rate pie_chart

38%

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR

SJR Impact

0,125

H-index

Docs (year)

337

Docs 3y

Total refs

8474

Cites 3y

Citable 3y

Cites/Doc 2y

0.54

Ref/Doc

25.15

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERS AND THEIR APPLICATION IN PHOTONIC INTEGRATED DEVICES

Wafer Fusion for Surface-Normal Optoelectronic Device Applications

Free-Space Integrated Optics Realized by Surface-Micromachining

FOUR-WAVE MIXING IN SEMICONDUCTOR TRAVELING-WAVE AMPLIFIERS FOR WAVELENGTH CONVERSION IN ALL-OPTICAL NETWORKS

Foreword

FLOORPLAN DESIGN WITH LOW POWER CONSIDERATIONS

Fiber Optic Infrastructure for Wireless Communication Networks

ERBIUM-DOPED FIBER AMPLIFIERS FOR MULTIWAVELENGTH LIGHTWAVE NETWORKS: IMPACT OF THE NON-FLAT GAIN SPECTRUM

ENERGY STATES IN QUANTUM DOTS

Electroabsorption of Unstrained InGaAs/InAlGaAs Multiple Quantum Well Structure Grown on GaAs Substrates

Electro-Optic Characterization of Microwave Standing Waves in a GaAs Transmission Line by Using a Novel Phase Analyzing Technique

Dynamics of Wide Bandwidth Semiconductor Lasers

SHOW MORE ARTICLES

Dual Antiresonant Reflecting Optical Waveguide Devices

"THE CALCULATION OF POWER PENALTY IN ""WDM + EDFA"" SYSTEM DUE TO STIMULATED RAMAN SCATTERING"

Current Methods of Speech Coding

CARBON NANOTUBES AS A PERFECTLY CONDUCTING CYLINDER

Bibliography

APPLICATIONS OF QUANTUM DOTS IN SEMICONDUCTOR LASERS

ANALYSIS AND EXPERIMENT OF MULTICHANNEL WDM + EDFA OPTICAL FIBER TRANSMISSION SYSTEMS

AN INVESTIGATION OF MULTI-FUNCTIONAL SEMICONDUCTOR BISTABLE LASER

AN INTRODUCTION TO HIGH SPEED TRANSMISSION SYSTEMS AND RELATED DEVICES IN CHINA

A PRACTICAL ELECTRO-OPTIC SAMPLER FOR CHARACTERIZATION INTERNAL TO GaAs ICs

A NEW CMOS DRIVER MODEL FOR TRANSIENT ANALYSIS AND POWER DISSIPATION ANALYSIS

A Holographic Memory for Digital Data Storage

FAQs

International Journal of High Speed Electronics and Systems has an SJR of 0,125 (best quartile Q4) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for International Journal of High Speed Electronics and Systems is 38%.

International Journal of High Speed Electronics and Systems

Metrics

Name good journals. Call out predatory ones.

Researcher reviews

Best articles by citations

FAQs

What is the SJR of International Journal of High Speed Electronics and Systems?

What is the APC / publication cost?

What is the acceptance rate?