ISSN: 0947-8396

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Applied Physics A: Materials Science and Processing Q2 Unclaimed

Springer Heidelberg Germany

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Applied Physics A: Materials Science and Processing is a journal indexed in SJR in Materials Science (miscellaneous) and Chemistry (miscellaneous) with an H index of 145. It has a price of 3500 €. It has an SJR impact factor of 0,406 and it has a best quartile of Q2. It is published in English.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Chemistry (miscellaneous) (Q2) Materials Science (miscellaneous) (Q2)

Price

3500 €

Gold OA

-

Green OA

0 €

Non OA

Metrics

Applied Physics A: Materials Science and Processing

0,406

SJR Impact factor

145

H Index

881

Total Docs (Last Year)

2729

Total Docs (3 years)

34287

Total Refs

5173

Total Cites (3 years)

2696

Citable Docs (3 years)

1,91

Cites/Doc (2 years)

38,92

Ref/Doc

Aims and Scope

Other journals with similar parameters

Nanoscale Research Letters Q2
Journal of Chemical Thermodynamics Q2
Journal of Raman Spectroscopy Q2
Frontiers in Materials Q2
Frontiers in Materials Q2

Best articles

gamma-Fe2O3 nanoparticles prepared by laser ablation of a tiny wire

(Bi0.5Na0.5)0.94Ba0.06TiO3 lead-free ceramics with simultaneous addition of CeO2 and La2O3

157-nm laser micromachining of N-BK7 glass and replication for microcontact printing

A new chemical bath deposition method for fabricating ZnS, Zn(OH)2, and ZnO thin films, and the optical and structural characterization of these materials

A new organic complex thin film for ultra-high-density data storage with a scanning tunneling microscope

Analysis of the interface between a pulsed laser deposited calcium phosphate coating and a titanium alloy substrate

Benzene thermal synthesis and characterization of crystalline carbon nitride

Biological synthesis, characterization, and antibacterial activity of nickel-doped copper ferrite nanoparticles

Carrier transport characteristics in PbSrSe thin films grown by molecular beam epitaxy

Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer

Comparative study of pulsed laser deposited HfO2 and Hf-aluminate films for high-k gate dielectric applications

Compositional effects on the structure and magnetotransport properties of lacunar La1-xMnO3-d films (x>0) grown by MOCVD

SHOW MORE ARTICLES

Control of size and shape of ncSi in aSiNx/aSi:H multilayers by laser induced constrained crystallization

Depolarizing a ferroelectric film by ac fields of diminishing amplitude

Detection and evaluation of the depth of surface cracks in conductive materials by using a loop antenna

Deviations from Bloch law in the case of surfacted nanoparticles

Dielectric properties of SrZrO3 thin films prepared by pulsed laser deposition

Dual ion-beam sputtering deposition of palladium-fluoropolymer nano-composites

Dynamics of colliding laser ablation plumes in background gas

Effect of counter shock wave on the expanding plume

Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl- 6-(p-dimethylaminostyryl)-4H-pyran

Effects of collision between two plumes on plume expansion dynamics during pulsed laser ablation in background gas

Effects of x and R3+ on the luminescent properties of Eu3+ in nanocrystalline YVxP1-xO4:Eu3+ and RVO4:Eu3+ thin-film phosphors

Electrical characteristics of Ta2O5 based capacitors with different gate electrodes

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