ISSN: 0947-8396

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Applied Physics A: Materials Science and Processing Q2 Unclaimed

Springer Heidelberg Germany

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Applied Physics A: Materials Science and Processing is a journal indexed in SJR in Materials Science (miscellaneous) and Chemistry (miscellaneous) with an H index of 149. It has a price of 3500 €. It has an SJR impact factor of 0,485 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,485.

Applied Physics A: Materials Science and Processing focuses its scope in these topics and keywords: carbon, laser, si, films, femtosecond, fabrication, evaporation, eu, energy, encapsulates, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Chemistry (miscellaneous) (Q2) Materials Science (miscellaneous) (Q2)

Price

3500 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

Applied Physics A: Materials Science and Processing

0,485

SJR Impact factor

149

H Index

947

Total Docs (Last Year)

2525

Total Docs (3 years)

39661

Total Refs

5902

Total Cites (3 years)

2524

Citable Docs (3 years)

2,50

Cites/Doc (2 years)

41,88

Ref/Doc

Other journals with similar parameters

Journal of Chemical Thermodynamics Q2
Materials Chemistry and Physics Q2
Frontiers in Physics Q2
MRS Communications Q2
Journal of Raman Spectroscopy Q2

Compare this journals

Aims and Scope

Best articles by citations

Fabricating high-aspect-ratio sub-diffraction-limit structures on silicon with two-photon photopolymerization and reactive ion etching

Uniaxial stress dependence of ferroelectric properties of xPMN-(1-x)PZT ceramic systems

Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition

Pulsed-laser deposition of a Nd:KGd(WO4)2 waveguide in Ar and O2 environments

Structural and electrical properties of Zr oxide film for high-k gate dielectrics by using electron cyclotron resonance plasma sputtering

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 ¬µm emission

Fluorescence studies of polycrystalline Al2O3 composite constituents: piezo-spectroscopic calibration and applications

Preparation of epitaxial compositionally graded (Ba1-xSrx)TiO3 thin films with enhanced dielectric properties

Novel forming of single and multiple ceramic micro-channels

gamma-Fe2O3 nanoparticles prepared by laser ablation of a tiny wire

The influence of disorder on magnetocaloric effect and the order of transition in ferromagnetic manganite (La1-x Nd x )2/3(Ca1-y Sr y )1/3MnO3

Fabrication of molecular-electronic circuits by nanoimprint lithography at low temperatures and pressures

SHOW MORE ARTICLES

Low-n mesoporous silica films: structure and properties

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN

Electroless gold deposition on silicon(100)wafer based on a seed layer of silver

Emission characteristics of inorganic/organic hybrid white-light phosphor

Formation of an intermediate phase in the ball milling synthesis of the sillenite phase of BSO and BTO

Electrical characteristics of Ta2O5 based capacitors with different gate electrodes

Analysis of the interface between a pulsed laser deposited calcium phosphate coating and a titanium alloy substrate

Laser direct write of planar alkaline microbatteries

Giant field amplification in tungsten nanowires

The effective conductivity of composite materials with cubic arrays of multi-coated spheres

Interface formation of iron on In-terminated InAs(001)

Lines of periodic hole structures produced by laser ablation using interfering femtosecond lasers split by a transmission grating

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