Applied Physics A: Materials Science and Processing Q2 Unclaimed

Springer Heidelberg Germany
Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.


Applied Physics A: Materials Science and Processing focuses its scope in these topics and keywords: carbon, laser, si, films, femtosecond, fabrication, evaporation, eu, energy, encapsulates, ...

Type: Journal

Type of Copyright: NA

Languages: English

Open Access Policy: Open Choice

Type of publications: NA

Publication frecuency: NA


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Applied Physics A: Materials Science and Processing


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Total Docs (Last Year)


Total Docs (3 years)


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Total Cites (3 years)


Citable Docs (3 years)


Cites/Doc (2 years)



Aims and Scope

carbon, laser, si, films, femtosecond, fabrication, evaporation, eu, energy, encapsulates, filmselectrochemical, formation, formed, fulgidedoped, glass, glazing, growth, halidefree, influence, integrationonedimensional, electrical, egyptian, ancient, macroporousntype, catalystslarge, ce, cell, characteristics, continuouswave, cuznsns, cvd, cwlbinanoscale, decorated, deposition, desulfurization, devices, devicesnovel, direct, NA

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157-nm laser micromachining of N-BK7 glass and replication for microcontact printing

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A new chemical bath deposition method for fabricating ZnS, Zn(OH)2, and ZnO thin films, and the optical and structural characterization of these materials

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A new organic complex thin film for ultra-high-density data storage with a scanning tunneling microscope

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Analysis of the interface between a pulsed laser deposited calcium phosphate coating and a titanium alloy substrate

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Benzene thermal synthesis and characterization of crystalline carbon nitride

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Carrier transport characteristics in PbSrSe thin films grown by molecular beam epitaxy

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Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer

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Comparative study of pulsed laser deposited HfO2 and Hf-aluminate films for high-k gate dielectric applications

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Compositional effects on the structure and magnetotransport properties of lacunar La1-xMnO3-d films (x>0) grown by MOCVD

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