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Applied Surface Science
Netherlands · Elsevier B.V.
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Applied Surface Science

Applied Surface Science is a journal indexed in SJR in Surfaces, Coatings and Films with an H index of 249. It has a COP Index of 7,6 (best band D1). It is published in English. It has a COP Index of 7,6.

Applied Surface Science focuses its scope in these topics and keywords: films, oxide, nanocomposite, modified, chemical, thin, carbon, electron, anodic, adsorption, ...

ISSN: 0169-4332
Publisher: Elsevier B.V.
Category: Surfaces, Coatings and Films
Indexation: verifiedScopus / SJR verifiedWeb of Science
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7,6 D1 Top 10%

5 of 51 journals in Surfaces and Interfaces

H-index · SJR 249 · 1,31
Acceptance rate pie_chart
19% Selective
Source Acceptance_Rate
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Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

COP Index

7,6

D1 Top 10%

SJR Impact

1,31

H-index

249

Docs (year)

2268

Docs 3y

9660

Total refs

123997

Cites 3y

68631

Citable 3y

9655

Cites/Doc 2y

7.21

Ref/Doc

54.67

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Ballistic-electron emission microscopy and internal photoemission in Au/Si-structures - a comparison

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ZnO:Al thin films obtained by chemical spray: effect of the Al concentration

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Differentiated contrasts for M1/4TiS2 (M=Fe, Ni) UHV-STM images

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Detection of the optical magnetic field by circular symmetry plasmons

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Complex nature of the red photoluminescence band and peculiarities of its excitation in porous silicon

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Chemisorption of phenols and acids on TiO2 surface

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Chemical passivation of Si(111) capped by a thin GaSe layer

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Characterization of surface nanostructures by STM light emission: individual GaAs/AlGaAs quantum wells

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Characterization of ceramic hydrogen separation membranes with varying nickel concentrations

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Characteristics of thin films of hexagonal boron nitride mixed with copper controlled by a magnetron co-sputtering deposition technique

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Characterisation of the BaTiO3/p-Si interface and applications

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Characterisation of surface morphological defects in MBE-grown GaN0.1As0.9 layers on GaAs

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