Default: Critical Reviews in Solid State and Materials Sciences

ISSN: 1040-8436

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Critical Reviews in Solid State and Materials Sciences Q1 Unclaimed

Taylor and Francis Ltd. United Kingdom
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Critical Reviews in Solid State and Materials Sciences is a journal indexed in SJR in Chemical Engineering (miscellaneous) and Electronic, Optical and Magnetic Materials with an H index of 75. It has a price of 2395 €. It has an SJR impact factor of 1,959 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,959.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Metrics

Critical Reviews in Solid State and Materials Sciences

1,959

SJR Impact factor

75

H Index

44

Total Docs (Last Year)

64

Total Docs (3 years)

9175

Total Refs

840

Total Cites (3 years)

64

Citable Docs (3 years)

12.75

Cites/Doc (2 years)

208.52

Ref/Doc

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Aims and Scope





Best articles by citations

Thermal Fixation of the Photorefractive Holograms Recorded in Lithium Niobate and Related Crystals

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Polymeric optical disk recording media

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The physics and applications of n-i-p-i doping superlattices

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Application of molecular dynamics simulations to the study of ion-bombarded metal surfaces

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Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part I

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The application of controlled superconductors in linear amplifier circuits

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Reactive Phase Formation in Thin Film Metal/Metal and Metal/Silicon Diffusion Couples

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High-Efficiency Silicon Solar Cells - Materials and Devices Physics

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Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation

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Copper Indium Selenides and Related Materials for Photovoltaic Devices

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Excitation and recombination processes during electroluminescence of rare earth-activated materials

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Temperature Measurement in Rapid Thermal Processing with Focus on the Application to Flash Lamp Annealing

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Metalorganic chemical vapor deposition

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Squid biomagnetic measurements

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Surface and adsorbate structural studies by photoemission in the hv = 50- TO 500-eV Range

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Molecular beam epitaxy of III-V semiconductors

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Diffusion in surface layers

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The Electronic Properties of Nanomaterials Elucidated by Synchrotron Radiation-Based Spectroscopy

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Photovoltaic devices

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3C-SiC Heteroepitaxial Growth on Silicon: The Quest for Holy Grail

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Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials

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High-resolution electron energy loss spectroscopy

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Recent applications of field emission microscopy

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Arsenic passivation of Si and Ge surfaces

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