ISSN: 0885-8993
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IEEE Transactions on Power Electronics Q1 Unclaimed
IEEE Transactions on Power Electronics is a journal indexed in SJR in Electrical and Electronic Engineering with an H index of 321. It has a price of 565 €. It has an SJR impact factor of 3,644 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 3,644.
IEEE Transactions on Power Electronics focuses its scope in these topics and keywords: converter, multilevel, active, voltage, power, resonant, regulation, interleaved, control, circuit, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -
565 €
Inmediate OANPD
Embargoed OA0 €
Non OAMetrics
3,644
SJR Impact factor321
H Index1383
Total Docs (Last Year)3664
Total Docs (3 years)44124
Total Refs31632
Total Cites (3 years)3657
Citable Docs (3 years)8.17
Cites/Doc (2 years)31.9
Ref/DocOther journals with similar parameters
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Nano-Micro Letters Q1
Proceedings of the IEEE Q1
IEEE Wireless Communications Q1
IEEE Transactions on Cybernetics Q1
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Aims and Scope
Best articles by citations
Low-Cost Sensorless Control of Brushless DC Motors With Improved Speed Range
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View moreOn the Conceptual Design and Performance of a Matrix Converter for Marine Electric Propulsion
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View moreAnalysis and Design of a Novel Single-Stage High-Power-Factor Electronic Ballast Based on Integrated Buck Half-Bridge Resonant Inverter
View moreSelective Harmonic Elimination Model Predictive Control for Multilevel Power Converters
View moreLimits in boost power factor corrector operating in border-line mode
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View moreSmall-Signal Modeling and Comprehensive Analysis of Magnetically Coupled Impedance-Source Converters
View moreAnalysis and Design of Phase Shift Full Bridge Converter With Series-Connected Two Transformers
View moreA Multi-Domain Co-Simulation Method for Comprehensive Shifted-Frequency Phasor DC-Grid Models and EMT AC-Grid Models
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View moreDual Active-Feedback Frequency Compensation for Output-Capacitorless LDO With Transient and Stability Enhancement in 65-nm CMOS
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