verified SJR 0,339 · Q3 • database Scopus / SJR & Web of Science indexed

United Kingdom · John Wiley and Sons Ltd

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields is a journal indexed in SJR in Modeling and Simulation and Electrical and Electronic Engineering with an H index of 39. It has a price of 2500 €. It has an SJR impact factor of 0,339 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,339.

ISSN: 0894-3370

Publisher: John Wiley and Sons Ltd

Category: Modeling and Simulation

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,339 Q3

H-index 39

Acceptance rate pie_chart

35%

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

2.500 € Open Access

Non-OA path 0 €

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,339

H-index

Docs (year)

193

Docs 3y

326

Total refs

7047

Cites 3y

741

Citable 3y

319

Cites/Doc 2y

2.39

Ref/Doc

36.51

Immediate OA

2500 €

Embargoed OA

NPD

Non OA / Submission

0 €

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Best articles by citations

Accuracy of the frequency-domain TLM method and its application to microwave circuits

Time-domain prediction of the radiated susceptibility in a shielded cable inside a penetrable shielded box

Approximation by Gegenbauer polynomials in the study of a rectangular ridged waveguide. Application to the analysis of a waveguide septum polarizer

Application of the TLM technique to integrated optic component modelling

Application of the short-open calibration technique to vector finite element method for analysis of microwave circuits

Analysis of circular waveguide filter using enhanced FDTD

An empiricalI-Vmodel of tunneling real-space transfer transistors for monostable-bistable transition logic element application

An efficient preconditioning technique for numerical simulation of hydrodynamic model semiconductor devices

An efficient algorithm for optimizing the electrical performance of HBTs

An approach for the calculation of magnetic field within square spiral inductors at low frequency

An analytical study of undoped symmetric double gate MOSFET (SDG)

An AlGaN/GaN HEMT by a reversed pyramidal channel layer: Investigation and fundamental physics

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An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices

A dynamical energy-based hysteresis model for iron loss calculation in laminated cores

A variational approach to boundary elements?two dimensional Helmholtz problems

A termination structure of 2.5kV IGBT with field plate and semi-resistive (SIPOS) layer

A parametric convex meshfree formulation for approximating the Helmholtz solution in circular coaxial waveguide

A novel method of analytically extracting model parameters for stacked transformers

A novel method for wave focusing investigation in metamaterial half-space and slab lens structures

A novel interpretation of the hyperbolization method used to solve the parabolic neutron diffusion equations by means of the wave digital concept

A novel approach to propagation prediction in confined and diffracting rough surfaces

A new parallelization strategy for solving time-dependent 3D Maxwell equations using a high-order accurate compact implicit scheme

A model for abrupt double heterojunction bipolar transistors

A guided tour of mathematical methods for the physical sciences, Roel Snieder, Cambridge University Press, Cambridge, 2001, ¬£55.00, ICBN 0521 782414 (hardback), ¬£16.95, ISBN 0521787513 (paper back)

FAQs

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields has an SJR of 0,339 (best quartile Q3) in the CountryOfPapers database.

Immediate OA APC is 2500 EUR. Non-OA / submission fee is 0 EUR.

The acceptance rate recorded for International Journal of Numerical Modelling: Electronic Networks, Devices and Fields is 35%.

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

Metrics

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Researcher reviews

Best articles by citations

FAQs

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What is the APC / publication cost?

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