ISSN: 0894-3370

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Q3 Unclaimed

John Wiley and Sons Ltd United Kingdom

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International Journal of Numerical Modelling: Electronic Networks, Devices and Fields is a journal indexed in SJR in Modeling and Simulation and Electrical and Electronic Engineering with an H index of 33. It has a price of 2500 €. It has an SJR impact factor of 0,393 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,393.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Computer Science Applications (Q3) Electrical and Electronic Engineering (Q3) Modeling and Simulation (Q3)

Price

2500 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields

0,393

SJR Impact factor

33

H Index

130

Total Docs (Last Year)

412

Total Docs (3 years)

4369

Total Refs

804

Total Cites (3 years)

404

Citable Docs (3 years)

2.05

Cites/Doc (2 years)

33.61

Ref/Doc

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Aims and Scope

Best articles by citations

Electrothermal model of optocoupler for SPICE

Cyclostationary noise modeling of radio frequency devices

New thin wire formulation for time-domain differential-equation models

Constrained multi-objective antenna design optimization using surrogates

A termination structure of 2.5kV IGBT with field plate and semi-resistive (SIPOS) layer

Full hydrodynamic simulation of GaAs MESFETs

Dynamic behavior of an island power system with variable-pitch wind turbines under high renewable energy penetration and high wind speed

The electromagnetic effect of cooling fins

RF and broadband noise investigation in High-k/Metal Gate 28-nm CMOS bulk transistor

Introduction to symmetry analysis, B.J. Cantwell, Cambridge University Press, Cambridge, 2002, 654 pp, Price ¬£ 95, ISBN: 0521771838 (hardback), price ¬£ 35.95, ISBN: 0521777402 (paperback)

Numerical differentiation in magnetic field postprocessing

Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices

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A novel method for wave focusing investigation in metamaterial half-space and slab lens structures

A novel method of analytically extracting model parameters for stacked transformers

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Figures-of-merit genetic extraction for InGaAs lasers, SiGe low-noise amplifiers, and ZnSe/Ge/GaAs HBTs

Semi-analytical time-domain low-frequency scattering formulation for biological applications

Numerically distributed circuit parameters model on microstrip transmission line circuits and its application on CAD

Rapid prototyping of MIMO-OFDM based on parity bit selected and permutation spreading

Finite element method investigation of electrostatic precipitator performance

The electrothermal macromodel of the MA7800 monolithic positive-voltage regulators family

Concentration-dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin-on chemical fabrication methodology

Consistency of quasi-static boundary value problems in electromagnetic modelling

Finite Element Methods in Electrical Power Engineering, ABJ Reece and TW Preston, Oxford Science publications, Monographs in Electrical and Electronic Engineering, Oxford University Press, Oxford, 2000, 292 pp., '55 (hardback), ISBN 0-19-856504-6.