ISSN: 0021-4922
Journal Home
Journal Guideline
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes Q2 Unclaimed
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes is a journal indexed in SJR in Physics and Astronomy (miscellaneous) and Engineering (miscellaneous) with an H index of 179. It has an SJR impact factor of 0,307 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,307.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes focuses its scope in these topics and keywords: chemical, silicon, vapor, films, deposition, amorphous, phase, ion, thin, method, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -
- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,307
SJR Impact factor179
H Index854
Total Docs (Last Year)2832
Total Docs (3 years)33245
Total Refs3204
Total Cites (3 years)2792
Citable Docs (3 years)1.1
Cites/Doc (2 years)38.93
Ref/DocOther journals with similar parameters
Physical Review Accelerators and Beams Q2
Physical Chemistry Chemical Physics Q2
Contemporary Physics Q2
Results in Physics Q2
Diamond and Related Materials Q2
Compare this journals
Aims and Scope
Best articles by citations
Random number generation using magnetic domain images of magneto-optical materials
View moreGrowth temperature dependence of cubic GaN step structures and cubic InN dot arrays grown on MgO (001) vicinal substrates
View moreMirror Design and Alignment for X-Ray Lithography Beamlines
View morePossible cause of chemiluminescence in silicone rubber
View moreHigh-rate multiple-input/multiple-output communication with adaptive time reversal demonstrated in tank experiments
View moreBoltzmann Equation Analysis of Electron Transport in a N2-O2Streamer Discharge
View moreThermal Stability Enhancement of Polyethylene Separators by Gamma-ray Irradiation for Lithium Ion Batteries
View moreElectrically Induced Orientation of Poly(silane)s
View moreDonor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al contentx> 0.5
View moreElectron Wave Interference in Ballistic and Quasi-Ballistic Nanostructures
View moreApplication of atomic and molecular data for plasma production and cancer therapy by heavy particle irradiation
View moreThe Influence of the Imaginary Part of Nonlinear Coefficient on Optical Bistability in Doped Polymer Film
View moreInfluence of GaN/sapphire contact area on bowing of GaN wafer grown by the Na-flux method with a sapphire dissolution process
View moreInterference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
View moreIdentification of Fixed and Interface Trap Charges in Hot-Carrier Stressed Metal Oxide Semiconductor Field Effect Transistors (MOSFET's) through Ultraviolet Light Anneal and Gate Capacitance Measurements
View moreIntegrated analog neurons inspired by mimicking synapses with metal-oxide memristive devices
View moreFormation of Au and AuSi x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO2 Layer
View morePhotovoltage detection of spin excitation of a ferromagnetic stripe and disk at low temperature
View moreOxide ion and proton conduction controlled in nano-grained yttria stabilized ZrO2 thin films prepared by pulse laser deposition
View morePhotophysics of metal halide perovskites: From materials to devices
View moreNovel Blue-to-Green Phosphor of Cu-Al-S System Sensitized with Rare-Earth Elements
View morePresent Status and Future Perspective of Bismuth-Based High-Temperature Superconducting Wires Realizing Application Systems
View moreSingle-Photon Generation in the 1.55-µm Optical-Fiber Band from an InAs/InP Quantum Dot
View moreLarge-grained Ag thin films with low electrical resistivity produced by sputtering in Kr gas
View more
Comments