Journal of Computational Electronics
Journal of Computational Electronics is a journal indexed in SJR in Modeling and Simulation and Electronic, Optical and Magnetic Materials with an H index of 52. It has a price of 2290 €. It has an SJR impact factor of 0,333 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,333.
Metrics
Scimago and CountryOfPapers database fields
SJR Impact
0,333
H-index
52
Docs (year)
126
Docs 3y
526
Total refs
5066
Cites 3y
1509
Citable 3y
522
Cites/Doc 2y
2.9
Ref/Doc
40.21
Immediate OA
2290 €
Embargoed OA
NPD
Non OA / Submission
0 €
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Best articles by citations
Advanced Simulation of Semiconductor Devices by Artificial Neural Networks
View moreTwo-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires
View moreComparison Between Non-Equilibrium Green's Function and Monte Carlo Simulations for Transport in a Silicon Quantum Wire Structure
View moreCoherent Phonon Scattering in Molecular Devices
View moreBrownian Ionic Channel Simulation
View moreBioMOCA: A Transport Monte Carlo Model for Ion Channels
View moreBandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance
View moreBallistic Transport in SiGe and Strained-Si MOSFETs
View moreApplicability of Quasi-3D and 3D MOSFET Simulations in the 'Atomistic' Regime
View moreAnalyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory
View moreAnalysis of Gate Dielectric Stacks Using the Transmitting Boundary Method
View moreAn improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs
View moreAn Effective Potential Approach to Modeling 25 nm MOSFET Devices
View more"Atomistic", Quantum and Ballistic Effects in Nanoscale MOSFETs
View moreAdvanced Electromagnetic Modelling of Multilayer Monolithic Microwave Integrated Circuit
View moreA regularized adaptive spatial resolution technique for fast and accurate analysis of metal-dielectric crossed gratings
View moreA Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions
View moreA Poisson P3M Force Field Scheme for Particle-Based Simulations of Ionic Liquids
View moreA Non Perturbative Model of Surface Roughness Scattering for Monte Carlo Simulation of Relaxed Silicon n-MOSFETs
View moreA new static differential design style for hybrid SET-CMOS logic circuits
View moreA Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations
View moreA Methodology for Quantitatively Introducing 'Atomistic' Fluctuations into Compact Device Models for Circuit Analysis
View moreA junctionless tunnel field effect transistor with low subthreshold slope
View more3D Parallel Simulations of Fluctuation Effects in pHEMTs
View more