ISSN: 1569-8025

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Journal of Computational Electronics Q3 Unclaimed

Springer Netherlands Netherlands

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Journal of Computational Electronics is a journal indexed in SJR in Modeling and Simulation and Electronic, Optical and Magnetic Materials with an H index of 52. It has a price of 2290 €. It has an SJR impact factor of 0,333 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,333.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Atomic and Molecular Physics, and Optics (Q3) Electrical and Electronic Engineering (Q3) Electronic, Optical and Magnetic Materials (Q3) Modeling and Simulation (Q3)

Price

2290 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

0,333

SJR Impact factor

52

H Index

126

Total Docs (Last Year)

526

Total Docs (3 years)

5066

Total Refs

1509

Total Cites (3 years)

522

Citable Docs (3 years)

2.9

Cites/Doc (2 years)

40.21

Ref/Doc

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Aims and Scope

Best articles by citations

Modeling Hot-Electron Injection in pFET's

Electrothermal Monte Carlo Simulations of InGaAs/AlGaAs HEMTs

Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum Rings

Two-Particle Eigenfunctions of Electrons Propagating in Two Parallel Quantum Wires

Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs

Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs

Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method

Structural and electronic properties of zigzag graphene nanoribbon decorated with copper cluster

Schottky Barrier Height at Organic/Metal Junctions from First-Principles

Coherent Phonon Scattering in Molecular Devices

Numerical Techniques for the Evaluation of Conductance and Noise in the Presence of a Perpendicular Magnetic Field

0.22 THz two-stage cascaded staggered double-vane traveling-wave tube

SHOW MORE ARTICLES

Simulation of Electron Decoherence Induced by Carrier-Carrier Scattering

Does Circulation in Individual Current States Survive in the Total Current Density?

Degeneracy and High Doping Effects in Deep Sub-Micron Relaxed and Strained Si n-MOSFETs

An Effective Potential Approach to Modeling 25 nm MOSFET Devices

A junctionless tunnel field effect transistor with low subthreshold slope

Numerical Analysis of Tunneling Between Stacked Quantum Wires with the Inclusion of the Effects from Effective Mass Discontinuities

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

Self-Consistent Subband Structure and Mobility of Two Dimensional Holes in Strained SiGe MOSFETs

A Monte Carlo Method Seamlessly Linking Quantum and Classical Transport Calculations

Full-Band Tunneling Currents in Nanometer-Scale MOS Structures

Efficient Computational Method for Ballistic Currents and Application to Single Quantum Dots

An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs