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Journal of Nanoelectronics and Optoelectronics

Journal of Nanoelectronics and Optoelectronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 21. It has a best quartile of Q3.

ISSN: 1555-130X

Publisher: American Scientific Publishers

Category: Electronic, Optical and Magnetic Materials

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

NPD Q3

H-index 21

Acceptance rate pie_chart

40%

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

SJR Impact

—

H-index

Docs (year)

Docs 3y

338

Total refs

Cites 3y

228

Citable 3y

335

Cites/Doc 2y

Ref/Doc

0.0

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Design and Analysis of Sequential Circuits Using Nanotechnology Based Quantum Dot Cellular Automata

ZnO Quantum Dots: Physical Properties and Optoelectronic Applications

Electrical and Optical Properties of Titanium Dioxide-Carbon Nanotube Nanocomposites

Efficiency Variation of Composite Films Dye-Sensitized Solar Cells at Different Annealing Temperature

Effects of the Magnetic Field on the Linear and Nonlinear Optical Absorption Coefficients and the Refractive Index Changes in a Spherical Quantum Dot

Effect of the Deposition Temperature on the Device Performance of the Nanostructured ZnO Thin Film Transistor by Sol Gel Method

Effect of Separation and Electric Field on Single Electron States of Lateral Quantum Dots

Effect of InAs/GaAs Quantum Dot Size on Infrared Photoresponse Characteristics

Dip-Coated Active Layers for High-Efficiency Polymer Solar Cells at Room Temperature

Dielectric Anisotropy and Electrical Properties of Liquid Crystals Doped with Nickel Oxide Nanoparticles

Design of Data Fusion Algorithm in Electrochemical Gas Sensor

Design and Simulation of a Sequence Generator using Single Electron Devices and Hybrid Architecture

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Design and Performance Analysis of High Electron Mobility Transistor Based Static Random Access Memory Cell for High Frequency Applications

A 3D Simulation Based Study of Surface Potential for Cylindrical Gate (CG) MOSFETs

Deposition of Macro Porous Low Temperature Shift Catalysts Over a Micro-Channel Plate and Their Catalytic Activity

Construction and Demonstration of a Coherent Doppler Radar

Comparative Analysis of Carbon Nanotube Field Effect Transistor and Nanowire Transistor for Low Power Circuit Design

Charge Injection-Assisted Current Efficiency Improvement in Roll-Off Characteristic of OLEDs by Device Modeling

Characteristics of Photodetectors Fabricated with Fullerene Derivatives: Influence of Light Intensity and Voltage

Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

Analysis of Intermediate Band Photovoltaic Solar Cell Based on ZnTe:O

An Improved Photoinduced Model for Silicon Based Microcantilever

A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

A Special Section on Nanoelectronics and Noble Energy Materials

FAQs

SJR is not available (NPD) for Journal of Nanoelectronics and Optoelectronics in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for Journal of Nanoelectronics and Optoelectronics is 40%.

Journal of Nanoelectronics and Optoelectronics

Metrics

Name good journals. Call out predatory ones.

Researcher reviews

Best articles by citations

FAQs

What is the SJR of Journal of Nanoelectronics and Optoelectronics?

What is the APC / publication cost?

What is the acceptance rate?