Physica Status Solidi (B): Basic Research
Physica Status Solidi (B): Basic Research is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Condensed Matter Physics with an H index of 124. It has a price of 3150 €. It has an SJR impact factor of 0,382 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,382.
Physica Status Solidi (B): Basic Research focuses its scope in these topics and keywords: investigation, inertgas, pressure, transfer, structural, tellurideoptical, nanotubesoptical, wiresinfluence, singlemolecule, sicfewelectron, ...
Metrics
Scimago and CountryOfPapers database fields
SJR Impact
0,382
H-index
124
Docs (year)
303
Docs 3y
920
Total refs
13562
Cites 3y
1595
Citable 3y
902
Cites/Doc 2y
1.72
Ref/Doc
44.76
Immediate OA
3150 €
Embargoed OA
NPD
Non OA / Submission
0 €
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Best articles by citations
Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition
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View moreEffects of heavy nitrogen doping in III-V semiconductors-How well does the conventional wisdom holdfor the dilute nitrogen"III-V-N alloys"?
View moreEffect of spin-orbit interaction on cyclotron resonance in InAs quantum wells
View moreEffect of in-plane anisotropy on specific heat jump of MgB2
View moreEffect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
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View moreControl of electron density in InN by Si doping and optical properties of Si-doped InN
View moreConfinement-, surface- and disorder-related effects in the resonant Raman spectra of nanometric CdS1-xSex crystals
View more"Unconventional covalent" KAgF3 is metallic above 50 K
View moreCharacterization of phase transition in new ferroelectric 2-aminopyridine phosphate crystal
View moreCharacterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer
View moreCharacteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy
View moreCation distribution and magnetic properties of natural chromites
View moreCarrier capture times in InGaN/GaN multiple quantum wells
View moreAtomic models for the ErSi2/Si(111) interface
View moreAngular dependence of the in-plane polarization anisotropy in the absorption coefficient of strainedM-plane GaN films on gamma-LiAlO2
View moreAnalysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy
View moreAdaptive finite element method for simulation of optical nano structures
View more5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003
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