Journal list Promote Sponsor
verified SJR 0,382 · Q3 • database Scopus / SJR & Web of Science indexed
Physica Status Solidi (B): Basic Research
Germany · John Wiley and Sons Inc
workspace_premium Q3 — Electronic, Optical and Magnetic Materials lock_open Open Access

Physica Status Solidi (B): Basic Research

Physica Status Solidi (B): Basic Research is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Condensed Matter Physics with an H index of 124. It has a price of 3150 €. It has an SJR impact factor of 0,382 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,382.

Physica Status Solidi (B): Basic Research focuses its scope in these topics and keywords: investigation, inertgas, pressure, transfer, structural, tellurideoptical, nanotubesoptical, wiresinfluence, singlemolecule, sicfewelectron, ...

ISSN: 0370-1972
Publisher: John Wiley and Sons Inc
Category: Electronic, Optical and Magnetic Materials
Indexation: verifiedScopus / SJR verifiedWeb of Science
open_in_new Portal NPD menu_book Guidelines NPD
schedule CountryOfPapers database fields
SJR Impact Factor trending_up
0,382 Q3
H-index 124
Acceptance rate pie_chart
24% Selective
Source Acceptance_Rate
Time to publication hourglass_top
NPD
Field NPD
Publication cost (APC) payments
3.150 € Open Access
Non-OA path 0 €

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,382

H-index

124

Docs (year)

303

Docs 3y

920

Total refs

13562

Cites 3y

1595

Citable 3y

902

Cites/Doc 2y

1.72

Ref/Doc

44.76

Immediate OA

3150 €

Embargoed OA

NPD

Non OA / Submission

0 €

shield Researcher voice

Name good journals. Call out predatory ones.

Share what peer review, fees, and timelines were really like. Praise fair editors. Flag APC traps, fake metrics, or spam solicitations — with facts from your submission.

Fair & fast peer review Clear APC / no surprise fees Suspected predatory Fake impact claims
rate_review Write an honest review

Researcher reviews

sentiment_dissatisfied No reviews yet — be the first to share an honest experience.
User
* Only to validate authenticity — identity is not shown publicly.

Best articles by citations

Characterization of the GaN-rich side of GaNP grown by metal-organic chemical vapor deposition

View more

Zero-phonon lines in the d=> f luminescence of LiYF4 : Er3+

View more

Electronic structure of magnesium diboride and related compounds

View more

Electronic structure of CeBa2Cu3O7

View more

Electron irradiation-induced electro-migration and diffusion of defects in Mg-doped GaN

View more

Effects of heavy nitrogen doping in III-V semiconductors-How well does the conventional wisdom holdfor the dilute nitrogen"III-V-N alloys"?

View more

Effect of spin-orbit interaction on cyclotron resonance in InAs quantum wells

View more

Effect of in-plane anisotropy on specific heat jump of MgB2

View more

Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate

View more

Dielectric and electrical properties of Sr5EuCr3Nb7O30 nanoceramics prepared using a novel chemical route

View more

Depth resolved nonlinear optical nanoscopy

View more

Control of electron density in InN by Si doping and optical properties of Si-doped InN

View more
SHOW MORE ARTICLES

Confinement-, surface- and disorder-related effects in the resonant Raman spectra of nanometric CdS1-xSex crystals

View more

"Unconventional covalent" KAgF3 is metallic above 50 K

View more

Characterization of phase transition in new ferroelectric 2-aminopyridine phosphate crystal

View more

Characterization of MOVPE-grown GaN layers on GaAs (111)B with a cubic-GaN (111) epitaxial intermediate layer

View more

Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy

View more

Cation distribution and magnetic properties of natural chromites

View more

Carrier capture times in InGaN/GaN multiple quantum wells

View more

Atomic models for the ErSi2/Si(111) interface

View more

Angular dependence of the in-plane polarization anisotropy in the absorption coefficient of strainedM-plane GaN films on gamma-LiAlO2

View more

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

View more

Adaptive finite element method for simulation of optical nano structures

View more

5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, 25-30 May 2003

View more

FAQs