ISSN: 1230-3402

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Opto-electronics Review Q3 Unclaimed

Elsevier B.V. Netherlands

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Opto-electronics Review is a journal indexed in SJR in Electrical and Electronic Engineering and Radiation with an H index of 49. It has an SJR impact factor of 0,267 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,267.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q3) Materials Science (miscellaneous) (Q3) Radiation (Q3)

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

0,267

SJR Impact factor

49

H Index

49

Total Docs (Last Year)

75

Total Docs (3 years)

1596

Total Refs

100

Total Cites (3 years)

75

Citable Docs (3 years)

1.28

Cites/Doc (2 years)

32.57

Ref/Doc

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Other journals with similar parameters

IEEE Solid-State Circuits Magazine Q3
International Journal of Microwave and Wireless Technologies Q3
IET Signal Processing Q3
IET Computers and Digital Techniques Q3
Journal of Power Electronics Q3

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Aims and Scope

Best articles by citations

Numerical analysis of SiGeSn/GeSn interband quantum well infrared photodetector

Electrical and photoresponse characteristics of 8-(1H-indol-3-ylazo)-naphthalene-2-sulfonic acid/n-Si photodiode

Comparison of time-series registration methods in breast dynamic infrared imaging

Review of night vision metrology

Analysis of a blackbody irradiance method of measurement of solar blind UV cameras' sensitivity

Investigation of effect of anti-aggregation agent on the performance of nanostructure dye-sensitized solar cells

Frequency-multiplexed gas sensing using chirped laser molecular spectroscopy

Investigation of effect of thiophene-2-acetic acid as an electron anchoring group for a photovoltaic device

Liquid crystal dual-mode band-pass filter with improved performance

Colloidal quantum dots conjugated with human serum albumin -interactions and bioimaging properties

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1-xCdxTe in wide temperature range

Infrared image filtering applied to the restoration of the convective heat transfer coefficient distribution in coiled tubes

SHOW MORE ARTICLES

Realization of XNOR logic function with all-optical high contrast XOR and NOT gates

Electrically tunable long-period fiber gratings with low-birefringence liquid crystal near the turn-around point

A new direction in design and manufacture of co-sensitized dye solar cells: Toward concurrent optimization of power conversion efficiency and durability

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Self-aggregates formation of tetrachloroperylene acid esters in Langmuir and Langmuir-Blodgett films

Integrated 25GHz and 50GHz spectral line width dense wavelength division demultiplexer on single photonic crystal chip

Coupled electric fields in photorefractive driven liquid crystal hybrid cells -theory and numerical simulation

Photo-reception properties of common LEDs

Synthesis of dispersion-compensating triangular lattice index-guiding photonic crystal fibres using the directed tabu search method

Accurate ball tracking in volleyball actions to support referees

Laser-plasma extreme ultraviolet and soft X-ray sources based on a double stream gas puff target: interaction of the radiation pulses with matter

Investigation of 2D-photonic crystal resonant cavity based WDM demultiplexer