Default: IEEE Electron Device Letters

ISSN: 0741-3106

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IEEE Electron Device Letters Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 144. It has an SJR impact factor of 1,397 and it has a best quartile of Q1. It is published in English.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -


IEEE Electron Device Letters


SJR Impact factor


H Index


Total Docs (Last Year)


Total Docs (3 years)


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Citable Docs (3 years)


Cites/Doc (2 years)



Best articles

"Corrections to ""An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

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[110] strained-SOI n-MOSFETs with higher electron mobility

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A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-µm 5-V CMOS Process

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A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories

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A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

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A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTs

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A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

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A Novel Technique to Decouple Electrical and Thermal Effects in SOA Limitation of Power LDMOSFET

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A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS

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A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

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A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

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An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

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An integrated thermo-capacitive type MOS flow sensor

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An Intrinsic Delay Extraction Method for Schottky Gate Field Effect Transistors

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Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

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Comparison of Threshold-Voltage Shifts for Uniaxial and Biaxial Tensile-Stressed n-MOSFETs

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Correcting effective mobility measurements for the presence of significant gate leakage current

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Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

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Effect of ohmic contacts on buffer leakage of GaN transistors

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Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs

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Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

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Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

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Electrical Properties of the Thin-Film Transistor With an Indium-Gallium-Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

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Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials

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