ISSN: 0741-3106
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IEEE Electron Device Letters Q1 Unclaimed
IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 166. It has an SJR impact factor of 1,316 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,316.
IEEE Electron Device Letters focuses its scope in these topics and keywords: silicon, breakdown, transistors, schottky, tunnel, mosfets, nonvolatile, patterned, power, thin, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -


- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
1,316
SJR Impact factor166
H Index512
Total Docs (Last Year)1265
Total Docs (3 years)12234
Total Refs6428
Total Cites (3 years)1261
Citable Docs (3 years)4.98
Cites/Doc (2 years)23.89
Ref/DocOther journals with similar parameters
Advanced Functional Materials Q1
Light: Science and Applications Q1
Nano-Micro Letters Q1
Optica Q1
Surface Science Reports Q1
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Aims and Scope
Best articles by citations
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