Default: IEEE Electron Device Letters

ISSN: 0741-3106

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IEEE Electron Device Letters Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 154. It has an SJR impact factor of 1,337 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,337.

IEEE Electron Device Letters focuses its scope in these topics and keywords: silicon, breakdown, schottky, tunnel, transistors, mosfets, film, thinfilm, thin, power, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

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Metrics

IEEE Electron Device Letters

1,337

SJR Impact factor

154

H Index

420

Total Docs (Last Year)

1290

Total Docs (3 years)

9773

Total Refs

5830

Total Cites (3 years)

1281

Citable Docs (3 years)

4,50

Cites/Doc (2 years)

23,27

Ref/Doc

Aims and Scope


silicon, breakdown, schottky, tunnel, transistors, mosfets, film, thinfilm, thin, power, memory, gate, flash, logic, impact, nonvolatile, mosfet, amorphous, channel, chargetrapping, dielectric, effects, patterned, gallium, indium, linearity, algangan,



Best articles by citations

The Impact of an Aluminum Top Layer on Inductors Integrated in an Advanced CMOS Copper Backend

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Realization of Low Driving Voltage in Organic Light-Emitting Diodes Using C60 as an Electron Transport Layer and Alq3 as a Buffer Layer

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A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

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A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

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Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

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A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

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Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

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Omnidirectional reflective contacts for light-emitting diodes

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RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

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RF MEMS switches fabricated on microwave-laminate printed circuit boards

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"Corrections to ""An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

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[110] strained-SOI n-MOSFETs with higher electron mobility

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Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

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Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

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A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTs

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Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching

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An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

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Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs

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Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique

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Statistics of successive breakdown events in gate oxides

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Improvement of Brightness Uniformity by AC Driving Scheme for AMOLED Display

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Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

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PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse

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