ISSN: 0741-3106

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IEEE Electron Device Letters Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States

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IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 166. It has an SJR impact factor of 1,316 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,316.

IEEE Electron Device Letters focuses its scope in these topics and keywords: silicon, breakdown, transistors, schottky, tunnel, mosfets, nonvolatile, patterned, power, thin, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q1) Electronic, Optical and Magnetic Materials (Q1)

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

1,316

SJR Impact factor

166

H Index

512

Total Docs (Last Year)

1265

Total Docs (3 years)

12234

Total Refs

6428

Total Cites (3 years)

1261

Citable Docs (3 years)

4.98

Cites/Doc (2 years)

23.89

Ref/Doc

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Aims and Scope

Best articles by citations

The Impact of an Aluminum Top Layer on Inductors Integrated in an Advanced CMOS Copper Backend

Realization of Low Driving Voltage in Organic Light-Emitting Diodes Using C60 as an Electron Transport Layer and Alq3 as a Buffer Layer

A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

Omnidirectional reflective contacts for light-emitting diodes

RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

RF MEMS switches fabricated on microwave-laminate printed circuit boards

"Corrections to ""An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

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[110] strained-SOI n-MOSFETs with higher electron mobility

Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTs

Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching

An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs

Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique

Statistics of successive breakdown events in gate oxides

Improvement of Brightness Uniformity by AC Driving Scheme for AMOLED Display

Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse