verified SJR 1,15 · Q1 • database Scopus / SJR & Web of Science indexed

United States · Institute of Electrical and...

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IEEE Electron Device Letters

IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 179. It has an SJR impact factor of 1,15 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,15.

IEEE Electron Device Letters focuses its scope in these topics and keywords: silicon, breakdown, schottky, tunnel, transistors, mosfets, film, memory, algangan, thinfilm, ...

ISSN: 0741-3106

Publisher: Institute of Electrical and Electronics Engineers Inc.

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

1,15 Q1

H-index 179

Acceptance rate pie_chart

21% Selective

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

1,15

H-index

179

Docs (year)

611

Docs 3y

1421

Total refs

14948

Cites 3y

6667

Citable 3y

1412

Cites/Doc 2y

4.53

Ref/Doc

24.46

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

An integrated thermo-capacitive type MOS flow sensor

UV Enhanced Field Emission for beta-Ga2O3 Nanowires

Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials

Electrical Properties of the Thin-Film Transistor With an Indium-Gallium-Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition

Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs

Effect of ohmic contacts on buffer leakage of GaN transistors

Dynamic Analysis of Current-Voltage Characteristics of Nanoscale Gated-Thyristors

Correcting effective mobility measurements for the presence of significant gate leakage current

Comparison of Threshold-Voltage Shifts for Uniaxial and Biaxial Tensile-Stressed n-MOSFETs

Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

SHOW MORE ARTICLES

An Intrinsic Delay Extraction Method for Schottky Gate Field Effect Transistors

"Corrections to ""An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

A simulation study to evaluate the feasibility of midgap workfunction metal gates in 25 nm bulk CMOS

A Novel Technique to Decouple Electrical and Thermal Effects in SOA Limitation of Power LDMOSFET

A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTs

A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

A new combination-erase technique for erasing nitride based (SONOS) nonvolatile memories

A Latchup-Immune and Robust SCR Device for ESD Protection in 0.25-¬µm 5-V CMOS Process

FAQs

IEEE Electron Device Letters has an SJR of 1,15 (best quartile Q1) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for IEEE Electron Device Letters is 21%.

IEEE Electron Device Letters

Metrics

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Researcher reviews

Best articles by citations

FAQs

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