Default: IEEE Electron Device Letters

ISSN: 0741-3106

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IEEE Electron Device Letters Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Electron Device Letters is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 171. It has an SJR impact factor of 1,25 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 1,25.

IEEE Electron Device Letters focuses its scope in these topics and keywords: silicon, breakdown, schottky, tunnel, transistors, mosfets, film, thinfilm, thin, power, ...

Type: Journal

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Languages: English

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IEEE Electron Device Letters


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Aims and Scope

silicon, breakdown, schottky, tunnel, transistors, mosfets, film, thinfilm, thin, power, memory, gate, flash, logic, impact, nonvolatile, mosfet, amorphous, channel, chargetrapping, dielectric, effects, patterned, gallium, indium, linearity, algangan,

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Realization of Low Driving Voltage in Organic Light-Emitting Diodes Using C60 as an Electron Transport Layer and Alq3 as a Buffer Layer

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A new self-aligned AlGaAs/GaAs HBT based on refractory emitter and base electrodes

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A Surface-Plasmon-Enhanced Silicon Solar Cell With KOH-Etched Pyramid Structure

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Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment

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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

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A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

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Spin Logic Devices via Electric Field Controlled Magnetization Reversal by Spin-Orbit Torque

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Omnidirectional reflective contacts for light-emitting diodes

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RF characterization of metal T-gate structure in fully-depleted SOI CMOS technology

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RF MEMS switches fabricated on microwave-laminate printed circuit boards

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"Corrections to ""An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

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[110] strained-SOI n-MOSFETs with higher electron mobility

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Self-Aligned n-Channel Germanium MOSFETs With a Thin Ge Oxynitride Gate Dielectric and Tungsten Gate

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Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications

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A New Voltage-Modulated AMOLED Pixel Design Compensating for Threshold Voltage Variation in Poly-Si TFTs

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Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching

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An Improved Model of Self-Heating Effects for Ultrathin Body SOI nMOSFETs Based on Phonon Scattering Analysis

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Efficiency of SOI-Like Structures for Reducing the Thermal Resistance in Thin-Film SOI Power LDMOSFETs

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Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique

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Statistics of successive breakdown events in gate oxides

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Improvement of Brightness Uniformity by AC Driving Scheme for AMOLED Display

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Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors

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PrxCa1-xMnO3-Based Memory and Si Time-Keeping Selector for Area and Energy Efficient Synapse

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