ISSN: 0018-9383
Journal Home
Journal Guideline
IEEE Transactions on Electron Devices Q2 Unclaimed
IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 191. It has an SJR impact factor of 0.695 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0.695.
IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, transistor, technology, cmos, process, mos, silicon, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -


- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0.695
SJR Impact factor191
H Index1044
Total Docs (Last Year)2488
Total Docs (3 years)29704
Total Refs8366
Total Cites (3 years)2477
Citable Docs (3 years)3.32
Cites/Doc (2 years)28.45
Ref/DocOther journals with similar parameters
IEEE Transactions on Magnetics Q2
Journal of Optics (United Kingdom) Q2
Journal of Magnetism and Magnetic Materials Q2
Micro and Nano Engineering Q2
Journal of the Optical Society of America A: Optics and Image Science, and Vision Q2
Compare this journals
Aims and Scope
Best articles by citations
MEMS fingerprint sensor immune to various finger surface conditions
View moreStudy of the quasi-saturation effect in VDMOS transistors
View moreCurrent mismatch due to local dopant fluctuations in mosfet channel
View more1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress
View moreChoice of epitaxial silicon thickness for 1.5- mu m CMOS SOS circuits
View moreHigh-speed sequential readout for infrared CID arrays with DC-coupled injection
View moreDC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
View morePhotothermal surface-micromachined actuators
View moreDesign guideline for minimum channel length in silicon-on-insulator (SOI) mosfet
View moreA self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application
View moreMeasurements and extractions of parasitic capacitances in ulsi layouts
View moreElectrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors
View moreMinority-carrier control gate turn-off thyristor
View morePerformance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels
View moreComparison of zincblende-phase GaN, cubic-phase SiC, and GaAs mesfets using a full-band monte carlo simulator
View moreAn improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics
View moreRAPS-a rapid thermal processor simulation program
View moreDetection of defects on the surface of microelectronic structures
View moreEnergy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors
View moreNickel induced crystallization of a- Si gate electrode at 500 ºC and MOS capacitor reliability
View moreAccurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer
View moreHigh transition temperature superconducting infrared detector
View moreThe thermal stability of one-transistor ferroelectric memory with Pt-Pb/sub 5/Ge/sub 3/O/sub 11/Ir-Poly-SiO/sub 2/-Si Gate Stack
View moreEdge-Oxidized Germanene Nanoribbons for Nanoscale Metal Interconnect Applications
View more
Comments