Default: IEEE Transactions on Electron Devices

ISSN: 0018-9383

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IEEE Transactions on Electron Devices Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 205. It has an SJR impact factor of 0,785 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,785.

IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, technology, transistor, cmos, sram, logic, power, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

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Metrics

IEEE Transactions on Electron Devices

0,785

SJR Impact factor

205

H Index

1019

Total Docs (Last Year)

2995

Total Docs (3 years)

30472

Total Refs

9711

Total Cites (3 years)

2983

Citable Docs (3 years)

3.07

Cites/Doc (2 years)

29.9

Ref/Doc

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Aims and Scope


cell, design, image, low, technology, transistor, cmos, sram, logic, power, plasma, ultrathin, silicon, process, soi, mos, dram, pretreatment, contacts, current, dc, detectors, doublegate, drain,



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High-speed sequential readout for infrared CID arrays with DC-coupled injection

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Measurements and extractions of parasitic capacitances in ulsi layouts

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