ISSN: 0018-9383

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IEEE Transactions on Electron Devices Q2 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States

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IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 198. It has an SJR impact factor of 0,773 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,773.

IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, transistor, technology, cmos, process, mos, silicon, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q2) Electronic, Optical and Magnetic Materials (Q2)

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

0,773

SJR Impact factor

198

H Index

1103

Total Docs (Last Year)

2720

Total Docs (3 years)

33376

Total Refs

9103

Total Cites (3 years)

2708

Citable Docs (3 years)

3.27

Cites/Doc (2 years)

30.26

Ref/Doc

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Aims and Scope

Best articles by citations

MEMS fingerprint sensor immune to various finger surface conditions

Study of the quasi-saturation effect in VDMOS transistors

Current mismatch due to local dopant fluctuations in mosfet channel

1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress

Choice of epitaxial silicon thickness for 1.5- mu m CMOS SOS circuits

High-speed sequential readout for infrared CID arrays with DC-coupled injection

DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

Photothermal surface-micromachined actuators

Design guideline for minimum channel length in silicon-on-insulator (SOI) mosfet

A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

Measurements and extractions of parasitic capacitances in ulsi layouts

Electrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors

SHOW MORE ARTICLES

Minority-carrier control gate turn-off thyristor

Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

Comparison of zincblende-phase GaN, cubic-phase SiC, and GaAs mesfets using a full-band monte carlo simulator

An improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics

RAPS-a rapid thermal processor simulation program

Detection of defects on the surface of microelectronic structures

Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors

Nickel induced crystallization of a- Si gate electrode at 500 ºC and MOS capacitor reliability

Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

High transition temperature superconducting infrared detector

The thermal stability of one-transistor ferroelectric memory with Pt-Pb/sub 5/Ge/sub 3/O/sub 11/Ir-Poly-SiO/sub 2/-Si Gate Stack

Edge-Oxidized Germanene Nanoribbons for Nanoscale Metal Interconnect Applications