ISSN: 0018-9383
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IEEE Transactions on Electron Devices Q2 Unclaimed
IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 198. It has an SJR impact factor of 0,773 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,773.
IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, transistor, technology, cmos, process, mos, silicon, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -


- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,773
SJR Impact factor198
H Index1103
Total Docs (Last Year)2720
Total Docs (3 years)33376
Total Refs9103
Total Cites (3 years)2708
Citable Docs (3 years)3.27
Cites/Doc (2 years)30.26
Ref/DocOther journals with similar parameters
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Photonic Sensors Q2
Optics and Photonics News Q2
EPJ Photovoltaics Q2
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Q2
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Aims and Scope
Best articles by citations
MEMS fingerprint sensor immune to various finger surface conditions
View moreStudy of the quasi-saturation effect in VDMOS transistors
View moreCurrent mismatch due to local dopant fluctuations in mosfet channel
View more1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress
View moreChoice of epitaxial silicon thickness for 1.5- mu m CMOS SOS circuits
View moreHigh-speed sequential readout for infrared CID arrays with DC-coupled injection
View moreDC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
View morePhotothermal surface-micromachined actuators
View moreDesign guideline for minimum channel length in silicon-on-insulator (SOI) mosfet
View moreA self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application
View moreMeasurements and extractions of parasitic capacitances in ulsi layouts
View moreElectrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors
View moreMinority-carrier control gate turn-off thyristor
View morePerformance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels
View moreComparison of zincblende-phase GaN, cubic-phase SiC, and GaAs mesfets using a full-band monte carlo simulator
View moreAn improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics
View moreRAPS-a rapid thermal processor simulation program
View moreDetection of defects on the surface of microelectronic structures
View moreEnergy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors
View moreNickel induced crystallization of a- Si gate electrode at 500 ºC and MOS capacitor reliability
View moreAccurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer
View moreHigh transition temperature superconducting infrared detector
View moreThe thermal stability of one-transistor ferroelectric memory with Pt-Pb/sub 5/Ge/sub 3/O/sub 11/Ir-Poly-SiO/sub 2/-Si Gate Stack
View moreEdge-Oxidized Germanene Nanoribbons for Nanoscale Metal Interconnect Applications
View more
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