Default: IEEE Transactions on Electron Devices

ISSN: 0018-9383

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IEEE Transactions on Electron Devices Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 176. It has an SJR impact factor of 0,879 and it has a best quartile of Q1. It is published in English.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Metrics

IEEE Transactions on Electron Devices

0,879

SJR Impact factor

176

H Index

814

Total Docs (Last Year)

2309

Total Docs (3 years)

23531

Total Refs

7193

Total Cites (3 years)

2288

Citable Docs (3 years)

3,25

Cites/Doc (2 years)

28,91

Ref/Doc


Best articles

1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress

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240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

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A 60-GHz Millimeter-Wave CMOS Integrated On-Chip Antenna and Bandpass Filter

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A cavity reservoir dispenser cathode for CRTs and low-cost traveling-wave tube applications

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A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator

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A high-performance directly insertable self-aligned ultra-rad-hard and enhanced isolation field-oxide technology for gigahertz silicon NMOS/CMOS VLSI

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A low-noise Bi-CMOS linear image sensor with auto-focusing function

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A new method to characterize border traps in submicron transistors using hysteresis in the drain current

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A novel bipolar imaging device with self-noise-reduction capability

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A novel bipolar imaging device-basic (base stored imager in cmos process)

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A possible explanation for high quantum efficiency of PtSi/porous Si schottky detectors

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A power-optimal repeater insertion methodology for global interconnects in nanometer designs

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SHOW MORE ARTICLES

A recessed-gate In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/ Ga/sub 0.47/As MIS-type FET

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A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

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A simple and effective ac pixel driving circuit for active matrix OLED

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A simple MOSFET model for circuit analysis

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A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film

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A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors

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Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

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Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

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Accurate profile simulation parameters in BF/sub 2/ implants in pre-amorphized silicon

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An improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics

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An insulated shallow extension structure for bulk mosfet

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Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition

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