Default: IEEE Transactions on Electron Devices

ISSN: 0018-9383

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IEEE Transactions on Electron Devices Q1 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States
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IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 186. It has an SJR impact factor of 0,828 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,828.

IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, technology, transistor, cmos, sram, logic, power, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

IEEE Transactions on Electron Devices

0,828

SJR Impact factor

186

H Index

889

Total Docs (Last Year)

2364

Total Docs (3 years)

25967

Total Refs

8047

Total Cites (3 years)

2355

Citable Docs (3 years)

3,22

Cites/Doc (2 years)

29,21

Ref/Doc

Aims and Scope


cell, design, image, low, technology, transistor, cmos, sram, logic, power, plasma, ultrathin, silicon, process, soi, mos, dram, pretreatment, contacts, current, dc, detectors, doublegate, drain,



Best articles by citations

MEMS fingerprint sensor immune to various finger surface conditions

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Study of the quasi-saturation effect in VDMOS transistors

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Current mismatch due to local dopant fluctuations in mosfet channel

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1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress

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Choice of epitaxial silicon thickness for 1.5- mu m CMOS SOS circuits

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High-speed sequential readout for infrared CID arrays with DC-coupled injection

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DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)

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Photothermal surface-micromachined actuators

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Design guideline for minimum channel length in silicon-on-insulator (SOI) mosfet

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A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

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Measurements and extractions of parasitic capacitances in ulsi layouts

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Electrical characteristics and reliability of UV transparent Si/sub 3/n/sub 3/ metal-insulator-metal (MIM) capacitors

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Minority-carrier control gate turn-off thyristor

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Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

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Comparison of zincblende-phase GaN, cubic-phase SiC, and GaAs mesfets using a full-band monte carlo simulator

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An improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics

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RAPS-a rapid thermal processor simulation program

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Detection of defects on the surface of microelectronic structures

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Energy transport numerical simulation of graded AlGaAs/GaAs heterojunction bipolar transistors

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Nickel induced crystallization of a- Si gate electrode at 500 ºC and MOS capacitor reliability

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Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

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High transition temperature superconducting infrared detector

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The thermal stability of one-transistor ferroelectric memory with Pt-Pb/sub 5/Ge/sub 3/O/sub 11/Ir-Poly-SiO/sub 2/-Si Gate Stack

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Edge-Oxidized Germanene Nanoribbons for Nanoscale Metal Interconnect Applications

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