verified COP 3,6 · Q2 • database Scopus / SJR & Web of Science indexed

United States · Institute of Electrical and...

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IEEE Transactions on Electron Devices

IEEE Transactions on Electron Devices is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 213. It has a COP Index of 3,6 (best band Q2). It is published in English. It has a COP Index of 3,6.

IEEE Transactions on Electron Devices focuses its scope in these topics and keywords: cell, design, image, low, technology, transistor, cmos, silicon, mos, plasma, ...

ISSN: 0018-9383

Publisher: Institute of Electrical and Electronics Engineers Inc.

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

COP Index trending_up

3,6 Q2

62 of 219 journals in Electronic, Optical and Magnetic Materials

H-index · SJR 213 · 0,788

Acceptance rate pie_chart

20% Selective

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

COP Index

3,6

SJR Impact

0,788

H-index

213

Docs (year)

1199

Docs 3y

3124

Total refs

37922

Cites 3y

11184

Citable 3y

3115

Cites/Doc 2y

3.48

Ref/Doc

31.63

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

A recessed-gate In/sub 0.52/Al/sub 0.48/As/n/sup +/-In/sub 0.53/ Ga/sub 0.47/As MIS-type FET

Thermal Transient Analysis of High-Power Green LED Fixed on BN Coated Al Substrates as Heatsink

Analytical modeling of an ion-implanted silicon MESFET in post-anneal condition

An insulated shallow extension structure for bulk mosfet

An improved method to estimate intrinsic small signal parameters of a gaas mesfet from measured dc characteristics

Accurate profile simulation parameters in BF/sub 2/ implants in pre-amorphized silicon

Accurate electrical characterization of forward AC behavior of real semiconductor diode: Giant negative capacitance and nonlinear interfacial layer

Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors

A SPICE model for thin-film transistors fabricated on grain-enhanced polysilicon film

A simple MOSFET model for circuit analysis

A simple and effective ac pixel driving circuit for active matrix OLED

SHOW MORE ARTICLES

A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

1/f Noise in Si/sub 0.8/Ge/sub 0.2/ pMOSFETs under fowler-nordheim stress

A power-optimal repeater insertion methodology for global interconnects in nanometer designs

A possible explanation for high quantum efficiency of PtSi/porous Si schottky detectors

A novel bipolar imaging device-basic (base stored imager in cmos process)

A novel bipolar imaging device with self-noise-reduction capability

A new method to characterize border traps in submicron transistors using hysteresis in the drain current

A low-noise Bi-CMOS linear image sensor with auto-focusing function

A high-performance directly insertable self-aligned ultra-rad-hard and enhanced isolation field-oxide technology for gigahertz silicon NMOS/CMOS VLSI

A general design methodology for the optimal multiple-field-limiting-ring structure using device simulator

A cavity reservoir dispenser cathode for CRTs and low-cost traveling-wave tube applications

A 60-GHz Millimeter-Wave CMOS Integrated On-Chip Antenna and Bandpass Filter

FAQs

IEEE Transactions on Electron Devices has a COP Index of 3,6 (Q2), ranked 62 of 219 in Electronic, Optical and Magnetic Materials. SJR: 0,788.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for IEEE Transactions on Electron Devices is 20%.

IEEE Transactions on Electron Devices

Metrics

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Researcher reviews

Best articles by citations

FAQs

What is the COP Index of IEEE Transactions on Electron Devices?

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What is the acceptance rate?