ISSN: 1536-125X

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IEEE Transactions on Nanotechnology Q2 Unclaimed

Institute of Electrical and Electronics Engineers Inc. United States

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IEEE Transactions on Nanotechnology is a journal indexed in SJR in Electrical and Electronic Engineering and Nanoscience and Nanotechnology with an H index of 94. It has an SJR impact factor of 0,435 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,435.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q2) Computer Science Applications (Q3) Nanoscience and Nanotechnology (Q3)

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

0,435

SJR Impact factor

94

H Index

110

Total Docs (Last Year)

344

Total Docs (3 years)

3935

Total Refs

911

Total Cites (3 years)

344

Citable Docs (3 years)

2.26

Cites/Doc (2 years)

35.77

Ref/Doc

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Aims and Scope

Best articles by citations

Uniaxial Strain Effects on the Performance of a Ballistic Top Gate Graphene Nanoribbon on Insulator Transistor

Modeling of the programming window distribution in multinanocrystals memories

Magnetoresistively Detected Electron Spin Resonance in Low-Density Two-Dimensional Electron Gas in GaAs-AlGaAs Single Quantum Wells

Synthesis of CZTSe Nanocrystal Prepared by a Facile Route in Coordinating Solvent From Elemental Sources

Spin Injection in Spin FETs Using a Step-Doping Profile

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Foreword

Directly Imprinted Periodic Corrugation on Ultrathin Metallic Electrode for Enhanced Light Extraction in Organic Light-Emitting Devices

Real-Time Controllable and Multifunctional Metasurfaces Utilizing Indium Tin Oxide Materials: A Phased Array Perspective

Quantum-effect and single-electron devices

Modeling of Electrostatic QCA Wires

Electron transport in nanocluster films with random voids

SHOW MORE ARTICLES

Activated Carbon Modified by CNTs/Ni-Co Oxide as Hybrid Electrode Materials for High Performance Supercapacitors

Spin Relaxation in the Channel of a Spin Field-Effect Transistor

"Corrections to ""performance simulation of nanoscale silicon rod field-effect transistor logic"

Development and Improvement of Carbon Nanotube-Based Ammonia Gas Sensors Using Ink-Jet Printed Interdigitated Electrodes

Growth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

Study of Temperature Dependence of Electron-Phonon Relaxation and Dephasing in Semiconductor Double-Dot Nanostructures

New OBIST Using On-Chip Compensation of Process Variations Toward Increasing Fault Detectability in Analog ICs

Performance simulation of nanoscale silicon rod field-effect transistor logic

Experimental observation and quantum modeling of electron irradiation on single-wall carbon nanotubes

Enhancing the Performance of ZnO Nanorod/p-GaN Heterostructured Photodetectors Using the Photoelectrochemical Oxidation Passivation Method

Effects of Strong Correlations in Single Electron Traps in Field-Effect Transistors