ISSN: 1536-125X
Journal Home
Journal Guideline
IEEE Transactions on Nanotechnology Q2 Unclaimed
IEEE Transactions on Nanotechnology is a journal indexed in SJR in Electrical and Electronic Engineering and Nanoscience and Nanotechnology with an H index of 99. It has an SJR impact factor of 0,425 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,425.
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -


- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,425
SJR Impact factor99
H Index111
Total Docs (Last Year)334
Total Docs (3 years)4090
Total Refs874
Total Cites (3 years)334
Citable Docs (3 years)2.7
Cites/Doc (2 years)36.85
Ref/DocOther journals with similar parameters
IEEE Transactions on Electron Devices Q2
Applied Artificial Intelligence Q2
International Journal of Adaptive Control and Signal Processing Q2
Transactions on Emerging Telecommunications Technologies Q2
Sensing and Bio-Sensing Research Q2
Compare this journals
Aims and Scope
Best articles by citations
Uniaxial Strain Effects on the Performance of a Ballistic Top Gate Graphene Nanoribbon on Insulator Transistor
View moreModeling of the programming window distribution in multinanocrystals memories
View moreMagnetoresistively Detected Electron Spin Resonance in Low-Density Two-Dimensional Electron Gas in GaAs-AlGaAs Single Quantum Wells
View moreSynthesis of CZTSe Nanocrystal Prepared by a Facile Route in Coordinating Solvent From Elemental Sources
View moreSpin Injection in Spin FETs Using a Step-Doping Profile
View moreAmbipolar coulomb blockade characteristics in a two-dimensional Si multidot device
View moreForeword
View moreDirectly Imprinted Periodic Corrugation on Ultrathin Metallic Electrode for Enhanced Light Extraction in Organic Light-Emitting Devices
View moreReal-Time Controllable and Multifunctional Metasurfaces Utilizing Indium Tin Oxide Materials: A Phased Array Perspective
View moreQuantum-effect and single-electron devices
View moreModeling of Electrostatic QCA Wires
View moreElectron transport in nanocluster films with random voids
View moreActivated Carbon Modified by CNTs/Ni-Co Oxide as Hybrid Electrode Materials for High Performance Supercapacitors
View moreSpin Relaxation in the Channel of a Spin Field-Effect Transistor
View more"Corrections to ""performance simulation of nanoscale silicon rod field-effect transistor logic"
View moreDevelopment and Improvement of Carbon Nanotube-Based Ammonia Gas Sensors Using Ink-Jet Printed Interdigitated Electrodes
View moreGrowth of GaAs Nanowires on Si Substrates Using a Molecular Beam Epitaxy
View more50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate
View moreStudy of Temperature Dependence of Electron-Phonon Relaxation and Dephasing in Semiconductor Double-Dot Nanostructures
View moreNew OBIST Using On-Chip Compensation of Process Variations Toward Increasing Fault Detectability in Analog ICs
View morePerformance simulation of nanoscale silicon rod field-effect transistor logic
View moreExperimental observation and quantum modeling of electron irradiation on single-wall carbon nanotubes
View moreEnhancing the Performance of ZnO Nanorod/p-GaN Heterostructured Photodetectors Using the Photoelectrochemical Oxidation Passivation Method
View moreEffects of Strong Correlations in Single Electron Traps in Field-Effect Transistors
View more
Comments