verified SJR 0,425 · Q2 • database Scopus / SJR & Web of Science indexed

United States · Institute of Electrical and...

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IEEE Transactions on Nanotechnology

IEEE Transactions on Nanotechnology is a journal indexed in SJR in Electrical and Electronic Engineering and Nanoscience and Nanotechnology with an H index of 99. It has an SJR impact factor of 0,425 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,425.

ISSN: 1536-125X

Publisher: Institute of Electrical and Electronics Engineers Inc.

Category: Electrical and Electronic Engineering

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,425 Q2

H-index 99

Acceptance rate pie_chart

26% Selective

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,425

H-index

Docs (year)

111

Docs 3y

334

Total refs

4090

Cites 3y

874

Citable 3y

334

Cites/Doc 2y

2.7

Ref/Doc

36.85

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Announcement

X3D: Heterogeneous Monolithic 3D Integration of "X" (Arbitrary) Nanowires: Silicon, III-V, and Carbon Nanotubes

Effects of dopant granularity on superhalo-channel mosfet's according to two- and three-dimensional computer simulations

Directly Imprinted Periodic Corrugation on Ultrathin Metallic Electrode for Enhanced Light Extraction in Organic Light-Emitting Devices

Development of a Stretchable Conductor Array With Embedded Metal Nanowires

Development and Improvement of Carbon Nanotube-Based Ammonia Gas Sensors Using Ink-Jet Printed Interdigitated Electrodes

Decoherence of Nuclear Spin Quantum Memory in a Quantum Dot

Decoherence in Quantum Systems

Coulomb-blockade in nanometric Si-film silicon-on-nothing (SON) MOSFETs

Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots

Carbon nanotube zoom lenses

Carbon Nanotube CMOS Analog Circuitry

SHOW MORE ARTICLES

Bis-Ferrocene Molecular QCA Wire: Ab Initio Simulations of Fabrication Driven Fault Tolerance

"Corrections to ""performance simulation of nanoscale silicon rod field-effect transistor logic"

Analytical Vernier Effects of a PANDA Ring Resonator for Microforce Sensing Application

Analysis of Electron Energy States in a Thin Quantum Well in a Parallel Magnetic Field

Ambipolar coulomb blockade characteristics in a two-dimensional Si multidot device

Aluminum-Doped Zinc Oxide Transparent Electrode Prepared by Atomic Layer Deposition for Organic Light Emitting Devices

Activated Carbon Modified by CNTs/Ni-Co Oxide as Hybrid Electrode Materials for High Performance Supercapacitors

A Wavelet-Based AFM Fast Imaging Method With Self-Tuning Scanning Frequency

A Variation-Aware Ternary Spin-Hall Assisted STT-RAM Based on Hybrid MTJ/GAA-CNTFET Logic

A novel multibridge-channel MOSFET (MBCFET): fabrication technologies and characteristics

A new model for including discrete dopant ions into Monte Carlo simulations

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

FAQs

IEEE Transactions on Nanotechnology has an SJR of 0,425 (best quartile Q2) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for IEEE Transactions on Nanotechnology is 26%.

IEEE Transactions on Nanotechnology

Metrics

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Researcher reviews

Best articles by citations

FAQs

What is the SJR of IEEE Transactions on Nanotechnology?

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What is the acceptance rate?