Default: Journal of Crystal Growth

ISSN: 0022-0248

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Journal of Crystal Growth Q2 Unclaimed

Elsevier B.V. Netherlands
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Journal of Crystal Growth is a journal indexed in SJR in Materials Chemistry and Condensed Matter Physics with an H index of 165. It has an SJR impact factor of 0,379 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,379.

Journal of Crystal Growth focuses its scope in these topics and keywords: growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, ...

Type: Journal

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Languages: English

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Journal of Crystal Growth


SJR Impact factor


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Aims and Scope

growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, silicon, crystals, properties, chemical, thin, patterned, layers, characterization, thermal, quality, molecular, metalorganic,

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Compositional variation and precipitate structures of copper-beryllium single crystals grown by the Bridgman technique

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Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods

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Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb

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Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography

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Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

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The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

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Growth and structure of Cr thin films on GaAs(001)

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules

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Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique

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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

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Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips

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Growth of bulk Ga1-xMnxN single crystals

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

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Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography

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Antisite incorporation during epitaxial growth of GaAs

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Effect of substrates on morphological evolution of a film in the silicon CVD process: approach by charged cluster model

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Device-grade homoepitaxial diamond film growth

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Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

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MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

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Some inclusions and defects in a synthetic diamond single crystal

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Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering

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