Default: Journal of Crystal Growth

ISSN: 0022-0248

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Journal of Crystal Growth Q2 Unclaimed

Elsevier Netherlands
Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Journal of Crystal Growth is a journal indexed in SJR in Materials Chemistry and Condensed Matter Physics with an H index of 149. It has an SJR impact factor of 0,513 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,513.

Journal of Crystal Growth focuses its scope in these topics and keywords: growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Price

- €

Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

Journal of Crystal Growth

0,513

SJR Impact factor

149

H Index

451

Total Docs (Last Year)

1690

Total Docs (3 years)

12968

Total Refs

3052

Total Cites (3 years)

1675

Citable Docs (3 years)

1,86

Cites/Doc (2 years)

28,75

Ref/Doc

Aims and Scope


growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, silicon, crystals, properties, chemical, thin, patterned, layers, characterization, thermal, quality, molecular, metalorganic,



Best articles by citations

Growth of AlN-SiC solid solutions by sequential supply epitaxy

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Compositional variation and precipitate structures of copper-beryllium single crystals grown by the Bridgman technique

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Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods

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Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb

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Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography

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Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

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The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

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Growth and structure of Cr thin films on GaAs(001)

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The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules

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Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique

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In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

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Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips

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Growth of bulk Ga1-xMnxN single crystals

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Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

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Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography

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Growth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation

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Antisite incorporation during epitaxial growth of GaAs

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Effect of substrates on morphological evolution of a film in the silicon CVD process: approach by charged cluster model

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Device-grade homoepitaxial diamond film growth

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Preparation and properties of TiSi2 thin films from TiCl4/H2 by plasma enhanced chemical vapor deposition

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Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

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MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

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Some inclusions and defects in a synthetic diamond single crystal

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Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering

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