ISSN: 0022-0248

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Journal of Crystal Growth Q2 Unclaimed

Elsevier B.V. Netherlands

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Journal of Crystal Growth is a journal indexed in SJR in Materials Chemistry and Condensed Matter Physics with an H index of 165. It has an SJR impact factor of 0,379 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,379.

Journal of Crystal Growth focuses its scope in these topics and keywords: growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Inorganic Chemistry (Q2) Condensed Matter Physics (Q3) Materials Chemistry (Q3)

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Metrics

0,379

SJR Impact factor

165

H Index

323

Total Docs (Last Year)

1103

Total Docs (3 years)

11397

Total Refs

2018

Total Cites (3 years)

1094

Citable Docs (3 years)

1.78

Cites/Doc (2 years)

35.28

Ref/Doc

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Materials Today Communications Q2
Diamond and Related Materials Q2
Journal of Non-Crystalline Solids Q2
IET Nanodielectrics Q2

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Aims and Scope

Best articles by citations

Growth of AlN-SiC solid solutions by sequential supply epitaxy

Compositional variation and precipitate structures of copper-beryllium single crystals grown by the Bridgman technique

Growth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods

Study of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb

Study on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography

Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy

The effect of N+-implanted Si(111) substrate and buffer layer on GaN films

Growth and structure of Cr thin films on GaAs(001)

The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules

Growth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique

In situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity

Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips

SHOW MORE ARTICLES

Growth of bulk Ga1-xMnxN single crystals

Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors

Relationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography

Growth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation

Antisite incorporation during epitaxial growth of GaAs

Effect of substrates on morphological evolution of a film in the silicon CVD process: approach by charged cluster model

Device-grade homoepitaxial diamond film growth

Preparation and properties of TiSi2 thin films from TiCl4/H2 by plasma enhanced chemical vapor deposition

Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

Some inclusions and defects in a synthetic diamond single crystal

Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering