ISSN: 0022-0248
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Journal of Crystal Growth Q2 Unclaimed
Journal of Crystal Growth is a journal indexed in SJR in Materials Chemistry and Condensed Matter Physics with an H index of 165. It has an SJR impact factor of 0,379 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,379.
Journal of Crystal Growth focuses its scope in these topics and keywords: growth, grown, vapor, crystal, films, gan, phase, substrates, rate, metal, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -
- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,379
SJR Impact factor165
H Index323
Total Docs (Last Year)1103
Total Docs (3 years)11397
Total Refs2018
Total Cites (3 years)1094
Citable Docs (3 years)1.78
Cites/Doc (2 years)35.28
Ref/DocOther journals with similar parameters
ChemNanoMat Q2
Materials Today Communications Q2
Diamond and Related Materials Q2
Journal of Non-Crystalline Solids Q2
IET Nanodielectrics Q2
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Aims and Scope
Best articles by citations
Growth of AlN-SiC solid solutions by sequential supply epitaxy
View moreCompositional variation and precipitate structures of copper-beryllium single crystals grown by the Bridgman technique
View moreGrowth and structural analysis of nano-diamond films deposited on Si substrates pretreated by various methods
View moreStudy of Al segregation phenomenon during Czochralski growth of AlxGa1-xSb
View moreStudy on defects in CZ-Si crystals grown by normal, cusp magnetic field and electromagnetic field techniques using multi-chroic infrared light scattering tomography
View moreRealization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy
View moreThe effect of N+-implanted Si(111) substrate and buffer layer on GaN films
View moreGrowth and structure of Cr thin films on GaAs(001)
View moreThe influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules
View moreGrowth of Bi3-2xCa2xFe5-x-yInyVxO12 crystals by top seed solution growth (TSSG) technique
View moreIn situ observation of the Marangoni convection in a NaCl aqueous solutions under microgravity
View moreImproved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips
View moreGrowth of bulk Ga1-xMnxN single crystals
View moreIncorporation of nitrogen into GaAsN grown by MOCVD using different precursors
View moreRelationship between characteristics of defects in CZ-Si crystals and V/G ratios by multi-chroic infrared light scattering tomography
View moreGrowth of Cd(1-x)ZnxTe epitaxial layers by isothermal closed space sublimation
View moreAntisite incorporation during epitaxial growth of GaAs
View moreEffect of substrates on morphological evolution of a film in the silicon CVD process: approach by charged cluster model
View moreDevice-grade homoepitaxial diamond film growth
View morePreparation and properties of TiSi2 thin films from TiCl4/H2 by plasma enhanced chemical vapor deposition
View moreInfluence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
View moreMBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates
View moreSome inclusions and defects in a synthetic diamond single crystal
View moreMinority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering
View more
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