ISSN: 0022-3727

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Journal of Physics D: Applied Physics Q1 Unclaimed

IOP Publishing Ltd. United Kingdom

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Journal of Physics D: Applied Physics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 220. It has a price of 2040 €. It has an SJR impact factor of 0,689 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,689.

Journal of Physics D: Applied Physics focuses its scope in these topics and keywords: magnetic, properties, x, dielectric, plasma, sf, ion, laser, nanoparticles, electron, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Acoustics and Ultrasonics (Q1) Condensed Matter Physics (Q2) Electronic, Optical and Magnetic Materials (Q2) Surfaces, Coatings and Films (Q2)

Price

2040 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

0,689

SJR Impact factor

220

H Index

1159

Total Docs (Last Year)

3382

Total Docs (3 years)

65010

Total Refs

11468

Total Cites (3 years)

3374

Citable Docs (3 years)

3.48

Cites/Doc (2 years)

56.09

Ref/Doc

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Aims and Scope

Best articles by citations

Study of seamless Au mesh flexible transparent heaters: Influence of mesh coverage

Reduced plume oscillation amplitude in hollow cathode discharge due to enhanced electron emission from keeper electrode

The role of graphene oxide precursor morphology in magnetic and microwave absorption properties of nitrogen-doped graphene

Plasmonic hybridization in symmetric metamaterial for broadband negative refractive index: simulation, experiment and characterization

Heartbeat extraction based on a high order derivative for ultra-wideband impulse radar application

Electrically driven flexible 2D plasmonic structure based on a nematic liquid crystal

Electron transport coefficients in O2magnetron discharges

Large-area 2D TMD layers for mechanically reconfigurable electronic devices

Measurements and kinetic modeling of atomic species in fuel-oxidizer mixtures excited by a repetitive nanosecond pulse discharge

Phase shift formulas in electro-optical crystals with an arbitrary incident direction

Emission characteristics of Xe-RbBr plasma

Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power HEMTs

SHOW MORE ARTICLES

Electroluminescence from n-ZnO:Ga/p-GaN heterojunction light-emitting diodes with different interfacial layers

Experimental and kinetic simulation studies of radio-frequency and direct-current breakdown in synthetic air

Fluid simulation of the phase-shift effect in Ar/CF4capacitively coupled plasmas

Size-tunable band alignment and optoelectronic properties of transition metal dichalcogenide van der Waals heterostructures

Two-dimensional electron density characterisation of arc interruption phenomenon in current-zero phase

Controlling the plasma of deep penetration laser welding to increase power efficiency

Optimization of pyroelectric figures of merit via magnesia doping in lithium tantalate single crystal

Unique properties of graphene quantum dots and their applications in photonic/electronic devices

Charge transport dynamics and the effects on electrical tree degradation under DC voltages in thermally aged silicone rubber

Toroidal dipolar bound state in the continuum and antiferromagnetic in asymmetric metasurface

Dielectrophoresis of bubbles in isomotive electric fields

Formation process and electron-beam incident energy dependence of one-dimensional uneven peanut-shaped C60polymer studied usingin situhigh-resolution infrared spectroscopy and density-functional calculations