ISSN: 1674-4926

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Journal of Semiconductors Q1 Unclaimed

IOS Press BV United Kingdom

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Journal of Semiconductors is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 54. It has an SJR impact factor of 0,945 and it has a best quartile of Q1. It has an SJR impact factor of 0,945.

Type: Journal

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Open Access Policy:

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Publication frecuency: -

Categories: Condensed Matter Physics (Q1) Electrical and Electronic Engineering (Q1) Electronic, Optical and Magnetic Materials (Q1) Materials Chemistry (Q1)

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Embargoed OA

- €

Non OA

Metrics

0,945

SJR Impact factor

54

H Index

137

Total Docs (Last Year)

453

Total Docs (3 years)

5606

Total Refs

1766

Total Cites (3 years)

419

Citable Docs (3 years)

3.87

Cites/Doc (2 years)

40.92

Ref/Doc

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Journal of Advanced Ceramics Q1
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Aims and Scope

Best articles by citations

A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors

Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

A multi-channel fully differential programmable integrated circuit for neural recording application

The effect of annealing temperature and the characteristics of p-n junction diodes based on sprayed polyaniline/ZnO thin films

An integrated MEMS piezoresistive tri-axis accelerometer

Influence of incident angle on the defect mode of locally doped photonic crystal

The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD

Chemical mechanical planarization of amorphous Ge2Sb2Te5with a soft pad

RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT

Fabrication and characteristics of magnetic field sensors based on nano-polysilicon thin-film transistors

Te vapor annealing of indium-doped CdMnTe crystals

Novel bandgap-based under-voltage-lockout methods with high reliability

SHOW MORE ARTICLES

ESD performance of LDMOS with source-bulk layout structure optimization

A new high-voltage level-shifting circuit for half-bridge power ICs

60-GHz array antenna with standard CMOS technology on Schott Borofloat

Experimental investigation of limit space charge accumulation mode operation in a semi-insulating GaAs photoconductive semiconductor switch

I/Q mismatch calibration based on digital baseband

Photoconductivity and surface chemical analysis of ZnO thin films deposited by solution-processing techniques for nano and microstructure fabrication

CMP process optimization using alkaline bulk copper slurry on a 300 mm Applied Materials Reflexion LK system

A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive sensors

Observation of exciton polariton condensation in a perovskite lattice at room temperature

High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit

Effect of p - d exchange with an itinerant carrier in a GaMnAs quantum dot