verified SJR 0,945 · Q1 • database Scopus / SJR & Web of Science indexed

United Kingdom · IOS Press BV

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Journal of Semiconductors

Journal of Semiconductors is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 54. It has an SJR impact factor of 0,945 and it has a best quartile of Q1. It has an SJR impact factor of 0,945.

ISSN: 1674-4926

Publisher: IOS Press BV

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,945 Q1

H-index 54

Acceptance rate pie_chart

34%

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,945

H-index

Docs (year)

137

Docs 3y

453

Total refs

5606

Cites 3y

1766

Citable 3y

419

Cites/Doc 2y

3.87

Ref/Doc

40.92

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

A feasibility study on SiC optoinjected CCD with buried channels

VLSI implementation of MIMO detection for 802.11n using a novel adaptive tree search algorithm

A new high-voltage level-shifting circuit for half-bridge power ICs

A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effect

A multi-path gated ring oscillator based time-to-digital converter in 65 nm CMOS technology

A multi-channel fully differential programmable integrated circuit for neural recording application

A lower power reconfigurable multi-band transceiver for short-range communication

A low-power high-performance configurable auto-gain control loop for a digital hearing aid SoC

A low power high gain gain-controlled LNA + mixer for GNSS receivers

A high-voltage SOI MOSFET with a compensation layer on the trenched buried oxide layer

A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

SHOW MORE ARTICLES

A fully integrated 3.5 GHz CMOS differential power amplifier driver

60-GHz array antenna with standard CMOS technology on Schott Borofloat

A digitally calibrated CMOS RMS power detector for RF automatic gain control

A digital input class-D audio amplifier with sixth-order PWM

A CMOSGm - Ccomplex filter with a reconfigurable center and cutoff frequencies in low-IF WiMAX receivers

A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive sensors

A 65 nm CMOS high efficiency 50 GHz VCO with regard to the coupling effect of inductors

A 6-7 GHz, 40 dB receiver RF front-end with 4.5 dB minimum noise figure in 0.13 ¬µm CMOS for IR-UWB applications

A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links

A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architecture

A 27-mW 10-bit 125-MSPS charge domain pipelined ADC with a PVT insensitive boosted charge transfer circuit

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

FAQs

Journal of Semiconductors has an SJR of 0,945 (best quartile Q1) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for Journal of Semiconductors is 34%.

Journal of Semiconductors

Metrics

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Researcher reviews

Best articles by citations

FAQs

What is the SJR of Journal of Semiconductors?

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What is the acceptance rate?