ISSN: 0921-5107
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Materials Science & Engineering B: Solid-State Materials for Advanced Technology Q2 Unclaimed
Materials Science & Engineering B: Solid-State Materials for Advanced Technology is a journal indexed in SJR in Materials Science (miscellaneous) and Condensed Matter Physics with an H index of 135. It has a price of 2990 €. It has an SJR impact factor of 0,647 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,647.
Materials Science & Engineering B: Solid-State Materials for Advanced Technology focuses its scope in these topics and keywords: properties, composite, silicon, optical, effect, ino, enhanced, electronic, electrodynamic, electrodeschalcogen, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -
2990 €
Inmediate OANPD
Embargoed OA0 €
Non OAMetrics
0,647
SJR Impact factor135
H Index714
Total Docs (Last Year)1291
Total Docs (3 years)39204
Total Refs5224
Total Cites (3 years)1291
Citable Docs (3 years)4.1
Cites/Doc (2 years)54.91
Ref/DocOther journals with similar parameters
Materialia Q2
Aerosol Science and Technology Q2
Journal of Physics and Chemistry of Solids Q2
JVC/Journal of Vibration and Control Q2
Journal of Physics Condensed Matter Q2
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Aims and Scope
Best articles by citations
Kinetics of native oxide film growth on epiready GaAs
View moreElectrical and photoelectrical behaviour of CdTe structures
View moreLaser action in praseodymium doped zinc chloride borophosphate glasses
View moreStudy of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy
View morePreface
View moreLuminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation
View moreSol-gel synthesis and characterization of the Ag2O-SiO2 system
View moreAccuracy and reproducibility of the electrochemical profiler
View moreMaterial quality improvements for high voltage 4H-SiC diodes
View moreMetrology of semiconductor device structures by cross-sectional AFM
View moreModeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation
View moreIdeal 4H-SiC pn junction and its characteristic shunt
View moreDependence of substrate deflection on spacer pitch in emissive flat panel displays
View moreSurface roughness studies on 4H-SiC layers grown by liquid phase epitaxy
View moreRaman scattering as a probing method of subsurface damage in SiC
View moreOptical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation
View moreIn situ reflectance monitoring in MOVPE of a multiwafer reactor
View moreStudy of structural defects limiting the luminescence of InGaN single quantum wells
View moreEffect of temperature on the thickening and morphology of chemical vapor deposited carbon fiber
View moreElectrical characterization and carrier transport mechanisms of GaAs p/i/n devices for photovoltaic applications
View moreHigh resolution X-ray diffraction using a high brilliance source, with rapid data analysis by auto-fitting
View moreUltra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique
View moreAbsorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC
View moreIntegrated analytical equipment for control of film growth in MBE technology
View more
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