ISSN: 0921-5107

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Materials Science & Engineering B: Solid-State Materials for Advanced Technology Q2 Unclaimed

Elsevier Ltd. United Kingdom

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Materials Science & Engineering B: Solid-State Materials for Advanced Technology is a journal indexed in SJR in Materials Science (miscellaneous) and Condensed Matter Physics with an H index of 129. It has a price of 2990 €. It has an SJR impact factor of 0,605 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,605.

Materials Science & Engineering B: Solid-State Materials for Advanced Technology focuses its scope in these topics and keywords: properties, composite, ino, effect, optical, silicon, dopings, doping, electrical, electrodeschalcogen, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q2) Materials Science (miscellaneous) (Q2) Mechanical Engineering (Q2) Mechanics of Materials (Q2)

Price

2990 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

Materials Science & Engineering B: Solid-State Materials for Advanced Technology

0,605

SJR Impact factor

129

H Index

467

Total Docs (Last Year)

998

Total Docs (3 years)

24511

Total Refs

3874

Total Cites (3 years)

998

Citable Docs (3 years)

3.89

Cites/Doc (2 years)

52.49

Ref/Doc

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Aims and Scope

Best articles by citations

Kinetics of native oxide film growth on epiready GaAs

Electrical and photoelectrical behaviour of CdTe structures

Laser action in praseodymium doped zinc chloride borophosphate glasses

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Preface

Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation

Sol-gel synthesis and characterization of the Ag2O-SiO2 system

Accuracy and reproducibility of the electrochemical profiler

Material quality improvements for high voltage 4H-SiC diodes

Metrology of semiconductor device structures by cross-sectional AFM

Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

Ideal 4H-SiC pn junction and its characteristic shunt

SHOW MORE ARTICLES

Dependence of substrate deflection on spacer pitch in emissive flat panel displays

Surface roughness studies on 4H-SiC layers grown by liquid phase epitaxy

Raman scattering as a probing method of subsurface damage in SiC

Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

In situ reflectance monitoring in MOVPE of a multiwafer reactor

Study of structural defects limiting the luminescence of InGaN single quantum wells

Effect of temperature on the thickening and morphology of chemical vapor deposited carbon fiber

Electrical characterization and carrier transport mechanisms of GaAs p/i/n devices for photovoltaic applications

High resolution X-ray diffraction using a high brilliance source, with rapid data analysis by auto-fitting

Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique

Absorption mapping of doping level distribution in n-type and p-type 4H-SiC and 6H-SiC

Integrated analytical equipment for control of film growth in MBE technology