Default: Materials Science & Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

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Materials Science & Engineering B: Solid-State Materials for Advanced Technology Q1 Unclaimed

Elsevier Ltd. United Kingdom
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Materials Science & Engineering B: Solid-State Materials for Advanced Technology is a journal indexed in SJR in Materials Science (miscellaneous) and Condensed Matter Physics with an H index of 118. It has a price of 2990 €. It has an SJR impact factor of 0,85 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,85.

Materials Science & Engineering B: Solid-State Materials for Advanced Technology focuses its scope in these topics and keywords: properties, composite, silicon, optical, effect, ino, enhanced, electronic, electrodynamic, electrodeschalcogen, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Metrics

Materials Science & Engineering B: Solid-State Materials for Advanced Technology

0,85

SJR Impact factor

118

H Index

253

Total Docs (Last Year)

487

Total Docs (3 years)

11515

Total Refs

2170

Total Cites (3 years)

486

Citable Docs (3 years)

3,92

Cites/Doc (2 years)

45,51

Ref/Doc

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Aims and Scope


properties, composite, silicon, optical, effect, ino, enhanced, electronic, electrodynamic, electrodeschalcogen, femtosecondlaser, gaassio, gas, ge, gel, generation, graphene, heteroepitaxial, electrical, dopings, doping, beam, carbonization, cathode, cdte, ceramics, conductive, contacts, coupling, cuosno, defects, desorption, detectorsnanoparticle,



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Luminescence and lasing in GaN epitaxial layers and InGaN/GaN quantum well heterostructures under optical and electron-beam excitation

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Sol-gel synthesis and characterization of the Ag2O-SiO2 system

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Accuracy and reproducibility of the electrochemical profiler

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Material quality improvements for high voltage 4H-SiC diodes

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Metrology of semiconductor device structures by cross-sectional AFM

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Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

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Ideal 4H-SiC pn junction and its characteristic shunt

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