verified SJR 0,785 · Q1 • database Scopus / SJR & Web of Science indexed

United Kingdom · Elsevier Ltd

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Materials Science in Semiconductor Processing

Materials Science in Semiconductor Processing is a journal indexed in SJR in Materials Science (miscellaneous) and Condensed Matter Physics with an H index of 95. It has an SJR impact factor of 0,785 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,785.

ISSN: 1369-8001

Publisher: Elsevier Ltd

Category: Materials Science (miscellaneous)

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,785 Q1

H-index 95

Acceptance rate pie_chart

28% Selective

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Open Access

Non-OA path 0 €

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,785

H-index

Docs (year)

847

Docs 3y

2076

Total refs

45908

Cites 3y

10053

Citable 3y

2067

Cites/Doc 2y

5.01

Ref/Doc

54.2

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

0 €

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Best articles by citations

Comparative study of point defects induced in PbTe thin films doped with Ga by different techniques

Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Dopant diffusion in GaP and related compounds: recent results and new considerations

Dislocation-impurity interaction in Si

Diffusion of nonstoichiometric defects in n-GaP crystals

Device advantage of the dislocation-free pressure grown GaN substrates

Development of an intelligent design tool for non-stoichiometric compound devices: an example

Detailed analysis of absorption data for indium nitride

Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique

Control of Ga doping level in beta-FeSi2 using Sn-Ga solvent

Conduction type and defect levels of beta-FeSi2 films grown by MBE with different Si/Fe ratios

SHOW MORE ARTICLES

Comparison of p+-n junction formed by BF2+ and B+ implantation in silicon microstrip detector with low and high thermal budget: impact of fluorine on electrical characteristics

A low-temperature preparation of ferroelectric SrxBi2+yTa2O9 thin film and its application to metal-ferroelectric-insulator-semiconductor structure

Cluster ion implantation: a molecular dynamics study

Characterizations of InxAlyGa1-x-yN alloy systems grown on GaN substrates by molecular-beam epitaxy

Characterization and production metrology of thin transistor gate oxide films

Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer

Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe

Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon

Application research of CdS: Eu3+ quantum dots-sensitized TiO2 nanotube solar cells

Anisotropic etching of the silicon crystal-surface free energy model

Angle resolved X-ray photoelectron spectroscopic study of ultrathin oxynitrides

Aluminum titanium nitride films grown with multiple precursors

FAQs

Materials Science in Semiconductor Processing has an SJR of 0,785 (best quartile Q1) in the CountryOfPapers database.

Immediate OA APC is not available (NPD). Non-OA / submission fee is 0 EUR.

The acceptance rate recorded for Materials Science in Semiconductor Processing is 28%.

Materials Science in Semiconductor Processing

Metrics

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Researcher reviews

Best articles by citations

FAQs

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What is the acceptance rate?