ISSN: 1369-8001

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Materials Science in Semiconductor Processing Q1 Unclaimed

Elsevier Ltd United Kingdom

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Materials Science in Semiconductor Processing is a journal indexed in SJR in Materials Science (miscellaneous) and Condensed Matter Physics with an H index of 95. It has an SJR impact factor of 0,785 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,785.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy: Open Choice

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q1) Mechanical Engineering (Q1) Mechanics of Materials (Q1) Materials Science (miscellaneous) (Q2)

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Metrics

Materials Science in Semiconductor Processing

0,785

SJR Impact factor

95

H Index

847

Total Docs (Last Year)

2076

Total Docs (3 years)

45908

Total Refs

10053

Total Cites (3 years)

2067

Citable Docs (3 years)

5.01

Cites/Doc (2 years)

54.2

Ref/Doc

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Aims and Scope

Best articles by citations

Radiation effects in silicon detectors processed on carbon and oxygen-rich substrates

Development of an intelligent design tool for non-stoichiometric compound devices: an example

Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy

Detailed analysis of absorption data for indium nitride

Realization of one-chip-two-wavelength light sources

Interaction of electrical active intrinsic defects in Sn-doping Bi2Te3

Characterizations of InxAlyGa1-x-yN alloy systems grown on GaN substrates by molecular-beam epitaxy

The magnetic properties in transition metal-doped chalcopyrite semiconductors

Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (001), (111)A,B and (110) surfaces

Control of Ga doping level in beta-FeSi2 using Sn-Ga solvent

The one-step vacuum growth of high-quality CuInS2 thin film suitable for photovoltaic applications

SHOW MORE ARTICLES

Epitaxial ZnO films grown by RF-assisted low-temperature CVD method

High-energy photoemission spectroscopy of ferromagnetic Ga1-xMnxN

Repeatability of indium oxide gas sensors for detecting methane at low temperature

Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers

Raman spectra of GaPAs-GaP heterostructure waveguides

Nonstoichiometry and defects in III-V compounds

The effect of TEM sample thickness on nucleation and growth and dissolution of {311} defects in Si+ implanted Si

High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

SEM observation of InP/ErP/InP double heterostructures grown on InP(001), InP(111)A, and InP(111)B

Non-stoichiometric growth of GaAs by the vapour pressure controlled Czochralski (VCz) method without B2O3 encapsulation

Excitation photocapacitance study of EL2 in n-GaAs and its relation to non-stoichiometry

Local structures around Er atoms doped in GaAs by low-temperature molecular beam epitaxy