ISSN: 1063-7397

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Russian Microelectronics Q4 Unclaimed

Pleiades Publishing United States

Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Russian Microelectronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 19. It has an SJR impact factor of 0,182 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,182.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q4) Electrical and Electronic Engineering (Q4) Electronic, Optical and Magnetic Materials (Q4) Materials Chemistry (Q4)

Price

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Inmediate OA

NPD

Embargoed OA

- €

Non OA

Metrics

0,182

SJR Impact factor

19

H Index

73

Total Docs (Last Year)

251

Total Docs (3 years)

1690

Total Refs

104

Total Cites (3 years)

251

Citable Docs (3 years)

0.38

Cites/Doc (2 years)

23.15

Ref/Doc

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Aims and Scope

Best articles by citations

Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals

Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits

Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET

Plasma-Assisted Diffusion Doping of Porous-Silicon Films

Evolution of the Co-N/Ti/Si System in Magnetron Sputtering of Co onto a Heated Ti/Si(100) Substrate

Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse Shape

Reducing Absorbed Dose by Optimizing Chip Dimensions

Technological Methods for Improving IC Reliability in Mass Production

Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results

Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model

Photoelectrochemical Oxidation and Erosion of ZnO in Water

SHOW MORE ARTICLES

Mathematical Modeling of Ionizing-Radiation Effects in ICs: A Review

Computer Evaluation of a Method for Combinational-Circuit Synthesis in FPGAs

Making Al Metallization Patterns

One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets

Nonlinear Recombination Waves in Zn-Doped Si at Fully Developed Instability

Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs

A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection