verified SJR 0,194 · Q4 • database Scopus / SJR indexed

United States · Pleiades Publishing

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Russian Microelectronics

Russian Microelectronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 20. It has an SJR impact factor of 0,194 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,194.

ISSN: 1063-7397

Publisher: Pleiades Publishing

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,194 Q4

H-index 20

Acceptance rate pie_chart

42%

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR

SJR Impact

0,194

H-index

Docs (year)

Docs 3y

344

Total refs

2457

Cites 3y

183

Citable 3y

343

Cites/Doc 2y

0.45

Ref/Doc

25.59

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits

Technological Methods for Improving IC Reliability in Mass Production

Reducing Absorbed Dose by Optimizing Chip Dimensions

Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse Shape

Plasma-Assisted Diffusion Doping of Porous-Silicon Films

Physicochemical deposition features of peritectic alloys for high-density chipping of silicon crystals

Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model

Photoelectrochemical Oxidation and Erosion of ZnO in Water

One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets

Nonlinear Recombination Waves in Zn-Doped Si at Fully Developed Instability

A Study of (In,Ga,Al)As/GaAs Quantum-Dot Heterostructures by X-ray Diffraction and Total Reflection

Mathematical Modeling of Ionizing-Radiation Effects in ICs: A Review

SHOW MORE ARTICLES

Making Al Metallization Patterns

Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results

Formation of Two-Component Vertical Contact Structures for Mounting Integrated-Circuit Chips

Evolution of the Co-N/Ti/Si System in Magnetron Sputtering of Co onto a Heated Ti/Si(100) Substrate

Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects

Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET

Computer Evaluation of a Method for Combinational-Circuit Synthesis in FPGAs

Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs

FAQs

Russian Microelectronics has an SJR of 0,194 (best quartile Q4) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for Russian Microelectronics is 42%.

Russian Microelectronics

Metrics

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Researcher reviews

Best articles by citations

FAQs

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