Default: Semiconductor Science and Technology

ISSN: 0268-1242

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Semiconductor Science and Technology Q1 Unclaimed

IOP Publishing Ltd. United Kingdom
Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Semiconductor Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 112. It has an SJR impact factor of 0,712 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,712.

Semiconductor Science and Technology focuses its scope in these topics and keywords: applications, diodes, model, thin, si, electrical, effect, electronicsdevelopment, feedback, filterexcitonic, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Metrics

Semiconductor Science and Technology

0,712

SJR Impact factor

112

H Index

446

Total Docs (Last Year)

934

Total Docs (3 years)

17546

Total Refs

2422

Total Cites (3 years)

932

Citable Docs (3 years)

2,45

Cites/Doc (2 years)

39,34

Ref/Doc

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Aims and Scope


applications, diodes, model, thin, si, electrical, effect, electronicsdevelopment, feedback, filterexcitonic, films, electron, formation, future, gaas, graphene, halo, heterojunction, highresolution, doublelayer, distributed, applicationsa, asihp, battle, beam, bioamplifiersoptical, bonded, carrier, cellthe, chemical, cmos, condensation, csinonlinear, diode, directly,



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Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

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Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

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Electrical, thermoelectric and thermophysical properties of hornet cuticle

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G-doping junction-formation mechanism

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MOS interface states: overview and physicochemical perspective

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GaN nanodiode arrays with improved design for zero-bias sub-THz detection

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Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors

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GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode

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The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

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Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors

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Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon

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Photoconductivity in AlSb/InAs quantum wells

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A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

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Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies

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Novel gate-controlled bipolar composite field effect transistor with large on-state current

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Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer

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Organic thin-film transistors with liquid crystalline polymer insulator integrated for solution-processed organic light-emitting devices

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Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors

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Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

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Small-signal parameters extraction and noise analysis of CNTFETs

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Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

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Strain compensation by relieving defects in SiGe channel for FinFET technologies

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Nitrogen doped p-type ZnO films and p-n homojunction

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Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range

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