Semiconductor Science and Technology
Semiconductor Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 129. It has an SJR impact factor of 0,405 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,405.
Semiconductor Science and Technology focuses its scope in these topics and keywords: diodes, model, applications, thin, si, lampin, bonded, mosfet, carrier, electrical, ...
Metrics
Scimago and CountryOfPapers database fields
SJR Impact
0,405
H-index
129
Docs (year)
205
Docs 3y
739
Total refs
9011
Cites 3y
1604
Citable 3y
739
Cites/Doc 2y
2.17
Ref/Doc
43.96
Immediate OA
—
Embargoed OA
NPD
Non OA / Submission
—
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Best articles by citations
Band structure parameters of Pb0.25Sn0.72Mn0.03Te semimagnetic semiconductors
View moreXPS investigation of the ALD Al2O3/HgCdTe heterointerface
View moreDesign and analysis of a multi-finger dual-direction SCR discharging electro-static current in a gradual transition manner
View moreDegradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes
View moreCurrent status of research and development of III N V semiconductor alloys
View moreCu-doped ZnO-based p-n hetero-junction light emitting diode
View moreCrystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering
View moreContinuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes
View moreCompact model for PZT ferroelectric capacitors with voltage dependent switching behavior
View moreCompact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors
View moreCharge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
View moreCapacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si
View moreBismuth-surfactant-induced growth and structure of InAs/GaAs(110) quantum dots
View moreA high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain
View moreBand parameters and strain effects in ZnO and group-III nitrides
View moreBack-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts
View moreAtomistic calculation of elastic moduli in strained silicon
View moreAtomic structures and dynamic properties of dislocations in semiconductors: current progress and stagnation
View moreAnalytic view on coupled single-electron lines
View moreAn affordable method to produce CuInS2 'mechano-targets' for film deposition
View moreAchieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode
View moreA study on the nucleation and MPCVD growth of thin, dense, and contiguous nanocrystalline diamond films on bare and Si3N4-coated N-polar GaN
View moreA novel solution to improve saddle-shape warpage in 3D NAND flash memory
View moreA new detection technique of crystalline defects by sheet resistance measurement on multicrystalline silicon wafers
View more