ISSN: 0268-1242

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Semiconductor Science and Technology Q2 Unclaimed

IOP Publishing Ltd. United Kingdom

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Semiconductor Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 126. It has an SJR impact factor of 0,411 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,411.

Semiconductor Science and Technology focuses its scope in these topics and keywords: applications, diodes, model, thin, si, electrical, effect, electronicsdevelopment, feedback, filterexcitonic, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q2) Electrical and Electronic Engineering (Q2) Materials Chemistry (Q2) Electronic, Optical and Magnetic Materials (Q3)

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Metrics

0,411

SJR Impact factor

126

H Index

194

Total Docs (Last Year)

989

Total Docs (3 years)

8637

Total Refs

1935

Total Cites (3 years)

989

Citable Docs (3 years)

2

Cites/Doc (2 years)

44.52

Ref/Doc

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Aims and Scope

Best articles by citations

Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device

Material investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures

Electrical, thermoelectric and thermophysical properties of hornet cuticle

G-doping junction-formation mechanism

MOS interface states: overview and physicochemical perspective

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Transport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors

GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors

Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon

Photoconductivity in AlSb/InAs quantum wells

SHOW MORE ARTICLES

A high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain

Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies

Novel gate-controlled bipolar composite field effect transistor with large on-state current

Suppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer

Organic thin-film transistors with liquid crystalline polymer insulator integrated for solution-processed organic light-emitting devices

Increasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors

Rigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT

Small-signal parameters extraction and noise analysis of CNTFETs

Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

Strain compensation by relieving defects in SiGe channel for FinFET technologies

Nitrogen doped p-type ZnO films and p-n homojunction

Systematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 ¬µm wavelength range