ISSN: 0268-1242
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Semiconductor Science and Technology Q1 Unclaimed
Semiconductor Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 112. It has an SJR impact factor of 0,712 and it has a best quartile of Q1. It is published in English. It has an SJR impact factor of 0,712.
Semiconductor Science and Technology focuses its scope in these topics and keywords: applications, diodes, model, thin, si, electrical, effect, electronicsdevelopment, feedback, filterexcitonic, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -


- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,712
SJR Impact factor112
H Index446
Total Docs (Last Year)934
Total Docs (3 years)17546
Total Refs2422
Total Cites (3 years)932
Citable Docs (3 years)2,45
Cites/Doc (2 years)39,34
Ref/DocOther journals with similar parameters
Nature Electronics Q1
Light: Science and Applications Q1
Advanced Functional Materials Q1
Optica Q1
Nature Reviews Materials Q1
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Aims and Scope
Best articles by citations
Impact of process-induced variability on the performance and scaling of Ge2Sb2Te5 Phase-change memory device
View moreMaterial investigations for improving stability of Au free Ta/Al-based ohmic contacts annealed at low temperature for AlGaN/GaN heterostructures
View moreElectrical, thermoelectric and thermophysical properties of hornet cuticle
View moreG-doping junction-formation mechanism
View moreMOS interface states: overview and physicochemical perspective
View moreGaN nanodiode arrays with improved design for zero-bias sub-THz detection
View moreTransport-map analysis of ionic liquid-gated ambipolar WSe2 field-effect transistors
View moreGaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode
View moreThe conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film
View moreCompact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors
View moreRaman microspectroscopy analysis of pressure-induced metallization in scratching of silicon
View morePhotoconductivity in AlSb/InAs quantum wells
View moreA high performance InGaN tunnel FET with InN interlayer and polarization-doped source and drain
View moreTop-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies
View moreNovel gate-controlled bipolar composite field effect transistor with large on-state current
View moreSuppression of efficiency droop in AlGaN based deep UV LEDs using double side graded electron blocking layer
View moreOrganic thin-film transistors with liquid crystalline polymer insulator integrated for solution-processed organic light-emitting devices
View moreIncreasing threshold voltage and reducing leakage of AlGaN/GaN HEMTs using dual-layer SiN x stressors
View moreRigorous channel temperature analysis verified for InAlN/AlN/GaN HEMT
View moreSmall-signal parameters extraction and noise analysis of CNTFETs
View moreLow frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes
View moreStrain compensation by relieving defects in SiGe channel for FinFET technologies
View moreNitrogen doped p-type ZnO films and p-n homojunction
View moreSystematic study of type II Ga1-xInxSb/InAs superlattices for infra-red detection in the 10-12 µm wavelength range
View more
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