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Semiconductor Science and Technology
United Kingdom · IOP Publishing Ltd.
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Semiconductor Science and Technology

Semiconductor Science and Technology is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 129. It has an SJR impact factor of 0,405 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,405.

Semiconductor Science and Technology focuses its scope in these topics and keywords: diodes, model, applications, thin, si, lampin, bonded, mosfet, carrier, electrical, ...

ISSN: 0268-1242
Publisher: IOP Publishing Ltd.
Category: Electronic, Optical and Magnetic Materials
Indexation: verifiedScopus / SJR verifiedWeb of Science
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schedule CountryOfPapers database fields
SJR Impact Factor trending_up
0,405 Q2
H-index 129
Acceptance rate pie_chart
23% Selective
Source Acceptance_Rate
Time to publication hourglass_top
NPD
Field NPD
Publication cost (APC) payments
NPD Subscription
Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,405

H-index

129

Docs (year)

205

Docs 3y

739

Total refs

9011

Cites 3y

1604

Citable 3y

739

Cites/Doc 2y

2.17

Ref/Doc

43.96

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Band structure parameters of Pb0.25Sn0.72Mn0.03Te semimagnetic semiconductors

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XPS investigation of the ALD Al2O3/HgCdTe heterointerface

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Design and analysis of a multi-finger dual-direction SCR discharging electro-static current in a gradual transition manner

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Degradation behavior of AlGaN-based 233 nm deep-ultraviolet light emitting diodes

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Current status of research and development of III N V semiconductor alloys

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Cu-doped ZnO-based p-n hetero-junction light emitting diode

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Crystal quality of SiGe films fabricated by the condensation technique and characterized by medium energy ion scattering

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Continuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes

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Compact model for PZT ferroelectric capacitors with voltage dependent switching behavior

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Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors

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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

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Capacitance spectroscopy of structures with Si nanoparticles deposited onto crystalline silicon p-Si

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Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts

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