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verified SJR 0,154 · Q4 • database Scopus / SJR & Web of Science indexed
Semiconductors
United States · Pleiades Publishing
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Semiconductors

Semiconductors is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics with an H index of 49. It has a price of 2395 €. It has an SJR impact factor of 0,154 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,154.

ISSN: 1063-7826
Publisher: Pleiades Publishing
Category: Electronic, Optical and Magnetic Materials
Indexation: verifiedScopus / SJR verifiedWeb of Science
open_in_new Portal NPD menu_book Guidelines NPD
schedule CountryOfPapers database fields
SJR Impact Factor trending_up
0,154 Q4
H-index 49
Acceptance rate pie_chart
32%
Source Acceptance_Rate
Time to publication hourglass_top
NPD
Field NPD
Publication cost (APC) payments
2.395 € Subscription
Non-OA path 0 €

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,154

H-index

49

Docs (year)

159

Docs 3y

357

Total refs

4207

Cites 3y

168

Citable 3y

356

Cites/Doc 2y

0.29

Ref/Doc

26.46

Immediate OA

2395 €

Embargoed OA

NPD

Non OA / Submission

0 €

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Best articles by citations

Deep levels in the band gap of GaN layers irradiated with protons

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Ultrafast Electron Drift in Field-Effect Semiconductor Structures with a Sectioned Channel

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Electrical Properties of MnIn[sub 2]S[sub 4] Single Crystals

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Electrical properties of fine-grained polycrystalline CdTe

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Electric transport in gallium antimonide single crystals involving molten GaSb-Sn inclusions

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Effective electron mass in a MnxHg1-x Te system

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Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots

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Effect of hydrogen on the electronic structure and properties of boron nitrides

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Effect of grain boundaries on the properties of cadmium telluride grown under nonequilibrium conditions

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Effect of a fullerene coating on the photoluminescence of porous silicon

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Donor compensation in the depletion layer of CdF2 crystals with a Schottky barrier

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Diffusion of zinc into InP with an unprotected surface

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Current-Voltage Characteristics of MnIn[sub 2]S[sub 4] and MnGa[sub 2]S[sub 4] Single Crystals

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Charge fluctuations at the bonding interface in the silicon-on-insulator structures

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Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide

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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

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Carrier density profile in weakly coupled GaAs/AlGaAs superlattices

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Capacitance study of electron traps in low-temperature-grown GaAs

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