ISSN: 1063-7826

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Semiconductors Q4 Unclaimed

Pleiades Publishing United States

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Semiconductors is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Atomic and Molecular Physics, and Optics with an H index of 49. It has a price of 2395 €. It has an SJR impact factor of 0,154 and it has a best quartile of Q4. It is published in English. It has an SJR impact factor of 0,154.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Atomic and Molecular Physics, and Optics (Q4) Condensed Matter Physics (Q4) Electronic, Optical and Magnetic Materials (Q4)

Price

2395 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

0,154

SJR Impact factor

49

H Index

159

Total Docs (Last Year)

357

Total Docs (3 years)

4207

Total Refs

168

Total Cites (3 years)

356

Citable Docs (3 years)

0.29

Cites/Doc (2 years)

26.46

Ref/Doc

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Progress In Electromagnetics Research Letters Q4
Chinese Journal of Luminescence Q4
Journal of Nanophotonics Q4
Nanosistemi, Nanomateriali, Nanotehnologii Q4

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Aims and Scope

Best articles by citations

1.7-1.8 ¬µm Diode lasers based on quantum-well InGaAsP/InP heterostructures

Donor compensation in the depletion layer of CdF2 crystals with a Schottky barrier

Electron transfer between semiconductor quantum dots via laser-induced resonance transitions

Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide

Spin depolarization in spontaneously polarized low-dimensional systems

Energy states in short-period symmetrical and asymmetrical (GaAs)N/(AlAs)M superlattices: The effect of the boundary conditions

Pulsed-laser modification of germanium nanoclusters in silicon

Properties of GaSb-based light-emitting diodes with chemically cut substrates

Hopping polarization photoconductivity of silicon with the involvement of impurity pairs of groups III and V

Thermodynamic Stability and Redistribution of Charges in Ternary AlGaN, InGaN, and InAlN Alloys

Energy Structure of A[sup +] Centers in Quantum Wells

Extremal dependence of the concentration of paramagnetic centers related to dangling bonds in si on ion-irradiation dose as evidence of nanostructuring

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Charge fluctuations at the bonding interface in the silicon-on-insulator structures

Galvanomagnetic effects in atomic-disordered HgSe1-x Sx compounds

Fermi level pinning and negative magnetoresistance in PbTe:(Mn, Cr)

Effect of a fullerene coating on the photoluminescence of porous silicon

Magnetic Properties of Germanium-Doped Cadmium Telluride

The influence of impurities on radiative recombination via EL2 centers in gallium arsenide single crystals

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

The evolution of surface structures in p-CdTe crystals under pulsed laser irradiation

Oxide-p-InSe heterostructures with improved photoelectric characteristics

Thermophotovoltaic cells for conversion of thermal radiation and concentrated sunlight to electricity

Electron-phonon damping factor for the landau quantization of 2D electrons with a fine structure of the energy spectrum

Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers