ISSN: 0040-6090

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Thin Solid Films Q2 Unclaimed

Elsevier Netherlands

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Thin Solid Films is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 192. It has an SJR impact factor of 0,544 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,544.

Thin Solid Films focuses its scope in these topics and keywords: films, thin, deposition, film, optical, coatings, properties, temperature, situ, oxide, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electronic, Optical and Magnetic Materials (Q2) Materials Chemistry (Q2) Metals and Alloys (Q2) Surfaces and Interfaces (Q2) Surfaces, Coatings and Films (Q2)

Price

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NPD

Embargoed OA

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Non OA

Metrics

0,544

SJR Impact factor

192

H Index

550

Total Docs (Last Year)

2010

Total Docs (3 years)

21957

Total Refs

4387

Total Cites (3 years)

1998

Citable Docs (3 years)

2,24

Cites/Doc (2 years)

39,92

Ref/Doc

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Journal of Solid State Chemistry Q2
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Journal of Electron Spectroscopy and Related Phenomena Q2
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Aims and Scope

Best articles by citations

Erratum to: "Field-emission characteristics of chemical vapor deposition-diamond films"

Dielectric properties of TiO2 thin films deposited by a DC magnetron sputtering system

The influence of different catalyzers in hot-wire CVD for the deposition of polycrystalline silicon thin films

High-rate deposition of silicon thin-film solar cells by the hot-wire cell method

Dielectric reference coatings for the evaluation of thin film characterization techniques

Influence of atomic hydrogen on the growth kinetics of a-Si:H films and on the properties of silicon substrates

Characterization and adhesion study of thin alumina coatings sputtered on PET

A Cat-CVD Si3N4 film study and its application to the ULSI process

Quasicrystal films: numerical optimization as a solar selective absorber

Epitaxial growth of gallium nitride by ion-beam-assisted evaporation

Preferred crystallographic orientation relationships of nickel films deposited on (100) cubic-zirconia substrates

Elastic properties of amorphous and nanocrystalline silicon

SHOW MORE ARTICLES

Langmuir and Langmuir-Blodgett films of fluorine-containing side chain liquid crystal copolysiloxanes

Investigation on the origin of wurtzite domains in thick cubic GaN using reactive ion etching

Formation of thin TiNxOy films by using a hollow cathode reactive DC sputtering system

Influence of gas supply and filament geometry on the large-area deposition of amorphous silicon by hot-wire CVD

High-stability hydrogenated amorphous silicon films for light-soaking prepared by catalytic CVD at high deposition rates

Proposal of catalytic chemical sputtering method and its application to prepare large grain size poly-Si

Photo-thermal excitation gas-source MBE growth of super-doped Si:Mn for spin-photonics applications

Influence of cooling rate on the dislocations and related luminescence in LPE SiGe layers grown on Si (100) substrates

Guiding principles for device-grade hydrogenated amorphous silicon films and design of catalytic chemical vapor deposition apparatus

Electrical characterization of CVD diamond thin films grown on silicon substrates

Effect of r.f.-plasma assistance in hot-wire CVD on properties of ¬µc-Si:H

Precursor gas effect on the mechanical and optical properties of ion beam deposited diamond-like carbon films