ISSN: 1598-1657

Journal Home

Journal Guideline

Journal of Semiconductor Technology and Science Q4 Unclaimed

Institute of Electronics Engineers of Korea South Korea

Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Journal of Semiconductor Technology and Science is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Electrical and Electronic Engineering with an H index of 22. It has a price of 2395 €. It has an SJR impact factor of 0,181 and it has a best quartile of Q4. It has an SJR impact factor of 0,181.

Type: Journal

Type of Copyright:

Languages:

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Electrical and Electronic Engineering (Q4) Electronic, Optical and Magnetic Materials (Q4)

Price

2395 €

Inmediate OA

NPD

Embargoed OA

0 €

Non OA

Metrics

Journal of Semiconductor Technology and Science

0,181

SJR Impact factor

22

H Index

39

Total Docs (Last Year)

181

Total Docs (3 years)

815

Total Refs

79

Total Cites (3 years)

181

Citable Docs (3 years)

0.5

Cites/Doc (2 years)

20.9

Ref/Doc

Comments

No comments ... Be the first to comment!

Publication speed *

Review quality *

Edition and editorial team *

Institutional email or ORCID *

* The email or ORCID field is only to validate the authenticity of the comment, the identity will not be public. .

Other journals with similar parameters

Optical Memory and Neural Networks (Information Optics) Q4
EPJ Applied Physics Q4
Informacije MIDEM Q4
Integrated Ferroelectrics Q4
Journal of Ovonic Research Q4

Compare this journals

Aims and Scope

Best articles by citations

A Combined Clock and Data Recovery Circuit with Adaptive Cancellation of Data-Dependent Jitter

Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge Storage

Charge Controlled Meminductor Emulator

MATLAB/Simulink Pulse-echo Ultrasound System Simulator with Electrical Impedance Matching

A Materials Approach to Resistive Switching Memory Oxides

Cost-Efficient and Automatic Large Volume Data Acquisition Method for On-Chip Random Process Variation Measurement

Timing Analysis Techniques Review for sub-30 nm Circuit Designs

A Design Guide of 3-stage CMOS Operational Amplifier with Nested Gm-C Frequency Compensation

Comprehensive Performance Analysis of Interconnect Variation by Double and Triple Patterning Lithography Processes

Soft Error Susceptibility Analysis for Sequential Circuit Elements Based on EPPM

A New Semi-Empirical Model for the Backgating Effect on the Depletion Width Modulation in GaAs MESFET's

A Nonvolatile Refresh Scheme Adopted 1T-FeRAM for Alternative 1T-DRAM

SHOW MORE ARTICLES

A 85-mW Multistandard Multiband CMOS Mobile TV Tuner for DVB-H/T, T-DMB, and ISDB-T Applications with FM Reception

Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution

An OTA with Positive Feedback Bias Control for Power Adaptation Proportional to Analog Workloads

Optimizing Effective Channel Length to Minimize Short Channel Effects in Sub-50 nm Single/Double Gate SOI MOSFETs

Integrate-and-Fire Neuron Circuit and Synaptic Device with Floating Body MOSFETs

Study on the Thermal Transient Response of TSV Considering the Effect of Electronic-Thermal Coupling

Improved Circuits for Single-photon Avalanche Photodiode Detectors

Small-Signal Analysis of a Differential Two-Stage Folded-Cascode CMOS Op Amp

A Gate-Leakage Insensitive 0.7-V 233-nW ECG Amplifier using Non-Feedback PMOS Pseudo-Resistors in 0.13-¬µm N-well CMOS

Influence of the Recombination Parameters at the Si/SiO2Interface on the Ideality of the Dark Current of High Efficiency Silicon Solar Cells

Small Molecular Organic Nonvolatile Memory Cells Fabricated with in Situ O2Plasma Oxidation

SOC Test Compression Scheme Sharing Free Variables in Embedded Deterministic Test Environment