verified SJR 0,539 · Q2 • database Scopus / SJR & Web of Science indexed

Netherlands · Elsevier B.V.

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Microelectronic Engineering

Microelectronic Engineering is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 115. It has an SJR impact factor of 0,539 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,539.

Microelectronic Engineering focuses its scope in these topics and keywords: gate, silicon, ion, semiconductor, technologies, nonvolatile, density, temperature, dielectrics, dioxide, ...

ISSN: 0167-9317

Publisher: Elsevier B.V.

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,539 Q2

H-index 115

Acceptance rate pie_chart

24% Selective

Source Acceptance_Rate

Time to publication hourglass_top

NPD

Field NPD

Publication cost (APC) payments

NPD Subscription

Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,539

H-index

115

Docs (year)

Docs 3y

334

Total refs

3765

Cites 3y

1032

Citable 3y

332

Cites/Doc 2y

3.41

Ref/Doc

44.29

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

A study of electron forward scattering effects on the footwidth of T-gates fabricated using a bilayer of PMMA and UVIII

X-ray nano-diffraction: 100 nm resolution obtained in a novel imaging technique for strain measurement at buried interfaces

Bias printing of APSM resists for 180 nm contact holes

Aqueous base developable epoxy resist for high sensitivity electron beam lithography

Application of neural network to enhancing accuracy of E-beam proximity effect correction

Application of Calixarene for nanometer magnetic particle fabrication

Analysis of a SCALPEL‚Ñ¢ multi-pass writing strategy

An experimental setup to test the MAPPER electron lithography concept

AlSixNy as an embedded layer for attenuated phase-shifting mask in 193 nm and the utilization of a chemically amplified negative resist NEB-22 for maskmaking

Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitter

Acid diffusion analysis in the chemically amplified CARL resist

A triphenylene derivative as a novel negative/positive tone resist of 10 nanometer resolution

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A study of multiple scattering effect with 10 kV e-beam system

157nm photodissociation of polyamides

A structure definition technique for 25 nm lines of silicon and related materials

A simple new method for the investigation of process latitude in E-beam lithography with positive resists

A silicon microfabricated electrostatic transducer: 1 MHz transmission in air and in water

A proposal of high power EUV lithography illumination system using synchrotron radiation

A novel insulation technique for smart power switching devices and very high voltage ICs above 10 kV

A novel bottom antireflective coating working for both KrF and ArF excimer laser lithography

A new lithography technique using super-resolution near-field structure

A micromachined Xenon flow regulator for space applications

A micromachined bistable 1?o2 switch for optical fibers

A liquid-xenon-jet laser-plasma x-ray and EUV source

FAQs

Microelectronic Engineering has an SJR of 0,539 (best quartile Q2) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for Microelectronic Engineering is 24%.

Microelectronic Engineering

Metrics

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Researcher reviews

Best articles by citations

FAQs

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