Default: Microelectronic Engineering

ISSN: 0167-9317

Journal Home

Journal Guideline

Microelectronic Engineering Q2 Unclaimed

Elsevier B.V. Netherlands
Unfortunately this journal has not been claimed yet. For this reason, some information may be unavailable.

Microelectronic Engineering is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 111. It has an SJR impact factor of 0,503 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,503.

Microelectronic Engineering focuses its scope in these topics and keywords: gate, silicon, density, technologies, temperature, nonvolatile, semiconductor, ion, crystallizationprogress, crystalsselective, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Metrics

Microelectronic Engineering

0,503

SJR Impact factor

111

H Index

104

Total Docs (Last Year)

395

Total Docs (3 years)

4745

Total Refs

1111

Total Cites (3 years)

393

Citable Docs (3 years)

2.69

Cites/Doc (2 years)

45.63

Ref/Doc

Comments

No comments ... Be the first to comment!

Aims and Scope


gate, silicon, density, technologies, temperature, nonvolatile, semiconductor, ion, crystallizationprogress, crystalsselective, contacts, deposition, design, detector, dielectrics, dielectricsdisposable, diode, computinganalysis, comparison, cobased, allpmma, amplified, applicationlongperiod, applicationslow, characterisation, bias, bilayer, bio, biomedical, chemically, cmos,



Best articles by citations

Experimental evaluation of arrayed microcolumn lithography

View more

A micromachined bistable 1?o2 switch for optical fibers

View more

The birefringence and polarization effects of amorphous Ge and Si gratings by focused-ion-beam

View more

A micromachined Xenon flow regulator for space applications

View more

Nanostructuring of zone plates for helium atom beam focusing

View more

A new lithography technique using super-resolution near-field structure

View more

Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling

View more

Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

View more

A proposal of high power EUV lithography illumination system using synchrotron radiation

View more

Quantum electron beam probe of sidewall dry-etch damage

View more

Using X-ray Lithography to make sub 100 nm MMICs

View more

Aqueous base developable epoxy resist for high sensitivity electron beam lithography

View more
SHOW MORE ARTICLES

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

View more

Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures

View more

Influence of wafer chucking on focus margin for resolving fine patterns in optical lithography

View more

Fabrication of nanostructures in GaN

View more

Performance of new E-beam lithography system JBX-9300FS

View more

Influence of electron acceleration voltage in the cell-projection lithography system

View more

Electrical characterization of the amorphous SiC-pSi structure

View more

Fabrication of NMR - Microsensors for nanoliter sample volumes

View more

Linearly-graded surface-doped SOI LDMOSFET with recessed source

View more

Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr

View more

Highly sensitive positive surface modification resists

View more

Development of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imaging

View more

FAQS