ISSN: 0167-9317
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Microelectronic Engineering Q2 Unclaimed
Microelectronic Engineering is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 111. It has an SJR impact factor of 0,503 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,503.
Microelectronic Engineering focuses its scope in these topics and keywords: gate, silicon, density, technologies, temperature, nonvolatile, semiconductor, ion, crystallizationprogress, crystalsselective, ...
Type: Journal
Type of Copyright:
Languages: English
Open Access Policy:
Type of publications:
Publication frecuency: -
- €
Inmediate OANPD
Embargoed OA- €
Non OAMetrics
0,503
SJR Impact factor111
H Index104
Total Docs (Last Year)395
Total Docs (3 years)4745
Total Refs1111
Total Cites (3 years)393
Citable Docs (3 years)2.69
Cites/Doc (2 years)45.63
Ref/DocOther journals with similar parameters
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Q2
Chinese Optics Letters Q2
Photonic Sensors Q2
Sensing and Bio-Sensing Research Q2
IEEE Transactions on Magnetics Q2
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Aims and Scope
Best articles by citations
Experimental evaluation of arrayed microcolumn lithography
View moreA micromachined bistable 1?o2 switch for optical fibers
View moreThe birefringence and polarization effects of amorphous Ge and Si gratings by focused-ion-beam
View moreA micromachined Xenon flow regulator for space applications
View moreNanostructuring of zone plates for helium atom beam focusing
View moreA new lithography technique using super-resolution near-field structure
View moreSimulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling
View moreComparison of negative tone resists NEB22 and UVN30 in e-beam lithography
View moreA proposal of high power EUV lithography illumination system using synchrotron radiation
View moreQuantum electron beam probe of sidewall dry-etch damage
View moreUsing X-ray Lithography to make sub 100 nm MMICs
View moreAqueous base developable epoxy resist for high sensitivity electron beam lithography
View moreHigh density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography
View moreOptical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures
View moreInfluence of wafer chucking on focus margin for resolving fine patterns in optical lithography
View moreFabrication of nanostructures in GaN
View morePerformance of new E-beam lithography system JBX-9300FS
View moreInfluence of electron acceleration voltage in the cell-projection lithography system
View moreElectrical characterization of the amorphous SiC-pSi structure
View moreFabrication of NMR - Microsensors for nanoliter sample volumes
View moreLinearly-graded surface-doped SOI LDMOSFET with recessed source
View moreOxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr
View moreHighly sensitive positive surface modification resists
View moreDevelopment of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imaging
View more
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