ISSN: 0167-9317

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Microelectronic Engineering Q2 Unclaimed

Elsevier Netherlands

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Microelectronic Engineering is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 106. It has an SJR impact factor of 0,467 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,467.

Microelectronic Engineering focuses its scope in these topics and keywords: gate, silicon, ion, density, technologies, semiconductor, nonvolatile, temperature, characterisation, dependent, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Atomic and Molecular Physics, and Optics (Q2) Condensed Matter Physics (Q2) Electrical and Electronic Engineering (Q2) Electronic, Optical and Magnetic Materials (Q2) Surfaces, Coatings and Films (Q2) Nanoscience and Nanotechnology (Q3)

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Metrics

0,467

SJR Impact factor

106

H Index

130

Total Docs (Last Year)

498

Total Docs (3 years)

5678

Total Refs

1321

Total Cites (3 years)

497

Citable Docs (3 years)

2.51

Cites/Doc (2 years)

43.68

Ref/Doc

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Aims and Scope

Best articles by citations

Experimental evaluation of arrayed microcolumn lithography

A micromachined bistable 1?o2 switch for optical fibers

The birefringence and polarization effects of amorphous Ge and Si gratings by focused-ion-beam

A micromachined Xenon flow regulator for space applications

Nanostructuring of zone plates for helium atom beam focusing

A new lithography technique using super-resolution near-field structure

Simulation of the drain-current characteristics of MOSFETs with ultrathin oxides in the presence of direct tunneling

Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

A proposal of high power EUV lithography illumination system using synchrotron radiation

Quantum electron beam probe of sidewall dry-etch damage

Using X-ray Lithography to make sub 100 nm MMICs

Aqueous base developable epoxy resist for high sensitivity electron beam lithography

SHOW MORE ARTICLES

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures

Influence of wafer chucking on focus margin for resolving fine patterns in optical lithography

Fabrication of nanostructures in GaN

Performance of new E-beam lithography system JBX-9300FS

Influence of electron acceleration voltage in the cell-projection lithography system

Electrical characterization of the amorphous SiC-pSi structure

Fabrication of NMR - Microsensors for nanoliter sample volumes

Linearly-graded surface-doped SOI LDMOSFET with recessed source

Oxide growth retardation induced by rapid thermal annealing in Czochralsky-grown silicon consequence on the efficiency and the stability of internal gettering of Cr

Highly sensitive positive surface modification resists

Development of a secondary-electron detection system for high-speed high-sensitivity inspection SEM imaging