Microelectronics Reliability
Microelectronics Reliability is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 110. It has an SJR impact factor of 0,436 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,436.
Metrics
Scimago and CountryOfPapers database fields
SJR Impact
0,436
H-index
110
Docs (year)
182
Docs 3y
989
Total refs
7046
Cites 3y
2302
Citable 3y
981
Cites/Doc 2y
2.32
Ref/Doc
38.71
Immediate OA
—
Embargoed OA
NPD
Non OA / Submission
—
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Best articles by citations
Characterising the surface roughness of AFM grown SiO2 on Si
View moreVolume impacts on GaAs reliability improvement
View moreDistributed control based on distributed electronic circuits: application to vibration control
View moreDirect tunnelling models for circuit simulation
View moreDielectric breakdown distributions for void containing silicon substrates
View moreDevelopments of new concept analytical instruments for failure analyses of sub-100 nm devices
View moreDevelopment of chip-on-flex using SBB flip-chip technology
View moreDetermination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction
View moreDetermination of the electrical properties of thermally grown ultrathin nitride films
View moreDegradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing
View moreComparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems
View moreChemical and physical limits on the performance of metal silicate high-k gate dielectrics
View moreCharacterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit
View moreA comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors
View moreCharacterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy
View moreBreakdown and latent damage of ultra-thin gate oxides under ESD stress conditions
View moreBody effect induced wear-out acceleration in ultra-thin oxides
View moreAnalysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs
View moreAn in-line process monitoring method using electron beam induced substrate current
View moreAn assessment of the value of added screening of electronic components for commercial aerospace applications
View moreAn anti-snapback circuit technique for inhibiting parasitic bipolar conduction during EOS/ESD events
View moreA new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd
View moreA new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics
View moreA new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation
View more