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verified SJR 0,436 · Q2 • database Scopus / SJR & Web of Science indexed
Microelectronics Reliability
United Kingdom · Elsevier Ltd
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Microelectronics Reliability

Microelectronics Reliability is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 110. It has an SJR impact factor of 0,436 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,436.

ISSN: 0026-2714
Publisher: Elsevier Ltd
Category: Electronic, Optical and Magnetic Materials
Indexation: verifiedScopus / SJR verifiedWeb of Science
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schedule CountryOfPapers database fields
SJR Impact Factor trending_up
0,436 Q2
H-index 110
Acceptance rate pie_chart
25% Selective
Source Acceptance_Rate
Time to publication hourglass_top
NPD
Field NPD
Publication cost (APC) payments
NPD Subscription
Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,436

H-index

110

Docs (year)

182

Docs 3y

989

Total refs

7046

Cites 3y

2302

Citable 3y

981

Cites/Doc 2y

2.32

Ref/Doc

38.71

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Characterising the surface roughness of AFM grown SiO2 on Si

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Volume impacts on GaAs reliability improvement

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Direct tunnelling models for circuit simulation

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Dielectric breakdown distributions for void containing silicon substrates

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Developments of new concept analytical instruments for failure analyses of sub-100 nm devices

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Development of chip-on-flex using SBB flip-chip technology

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Determination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction

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Determination of the electrical properties of thermally grown ultrathin nitride films

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Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

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Comparing migratory resistive short formation abilities of conductor systems applied in advanced interconnection systems

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Chemical and physical limits on the performance of metal silicate high-k gate dielectrics

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Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions

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Body effect induced wear-out acceleration in ultra-thin oxides

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