ISSN: 0026-2714

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Microelectronics Reliability Q2 Unclaimed

Elsevier Ltd United Kingdom

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Microelectronics Reliability is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Surfaces, Coatings and Films with an H index of 105. It has an SJR impact factor of 0,394 and it has a best quartile of Q2. It is published in English. It has an SJR impact factor of 0,394.

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Safety, Risk, Reliability and Quality (Q2) Atomic and Molecular Physics, and Optics (Q3) Condensed Matter Physics (Q3) Electrical and Electronic Engineering (Q3) Electronic, Optical and Magnetic Materials (Q3) Nanoscience and Nanotechnology (Q3) Surfaces, Coatings and Films (Q3)

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Embargoed OA

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Non OA

Metrics

0,394

SJR Impact factor

105

H Index

315

Total Docs (Last Year)

1017

Total Docs (3 years)

8834

Total Refs

1954

Total Cites (3 years)

1012

Citable Docs (3 years)

1.85

Cites/Doc (2 years)

28.04

Ref/Doc

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IEEE Journal on Exploratory Solid-State Computational Devices and Circuits Q2
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Photonic Sensors Q2
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IEEE Transactions on Magnetics Q2

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Aims and Scope

Best articles by citations

Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits

On the InGaP/InxGa1-xAs pseudomorphic high electron-mobility transistors for high-temperature operations

Impact of substituting SiO2 ILD by low k materials into AlCu RIE metallization

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices

Determination of trap cross-section in a-Si:H p-i-n diodes parameters using simulation and parameter extraction

Volume impacts on GaAs reliability improvement

Reliability of k-out-of-n nonrepairable systems with nonindependent components subjected to common shocks

Study of the self-alignment of no-flow underfill for micro-BGA assembly

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices

Electrical characterisation of oxides grown in different RTP ambients

RF modeling approach to determining end-of-life reliability for InP-based HBTs

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Editorial

Influence of gate length on ESD-performance for deep submicron CMOS technology

Characterisation of emitter/base leakage currents in SiGe HBTs produced using selective epitaxy

Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films

Statistical modeling of MOS devices for parametric yield prediction

Optimization of WSi2 by SiH4 CVD: impact on oxide quality

An in-line process monitoring method using electron beam induced substrate current

Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm)

Low frequency noise in thin gate oxide MOSFETs