verified SJR 0,352 · Q3 • database Scopus / SJR & Web of Science indexed

United Kingdom · Elsevier Ltd

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Solid-State Electronics

Solid-State Electronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 108. It has an SJR impact factor of 0,352 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,352.

Solid-State Electronics focuses its scope in these topics and keywords: effect, current, silicon, partial, implanted, growth, power, soi, n, carrier, ...

ISSN: 0038-1101

Publisher: Elsevier Ltd

Category: Electronic, Optical and Magnetic Materials

Indexation: verifiedScopus / SJR verifiedWeb of Science

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schedule CountryOfPapers database fields

SJR Impact Factor trending_up

0,352 Q3

H-index 108

Acceptance rate pie_chart

25% Selective

Source Acceptance_Rate

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NPD

Field NPD

Publication cost (APC) payments

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Non-OA path NPD

Metrics

Scimago and CountryOfPapers database fields

Scopus / SJR Web of Science

SJR Impact

0,352

H-index

108

Docs (year)

118

Docs 3y

609

Total refs

3256

Cites 3y

904

Citable 3y

604

Cites/Doc 2y

1.5

Ref/Doc

27.59

Immediate OA

—

Embargoed OA

NPD

Non OA / Submission

—

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Best articles by citations

Analytic modeling of the subthreshold behavior in MOSFET

Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator

Comparison of the effects of H2 and D2 plasma exposure on GaAs MESFETs

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

Characterization of tunneling current in ultra-thin gate oxide

Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

Channel and well design of quarter-micron high performance retrograde well pMOSFETs

Breakdown of transistors in Marx bank circuit

Breakdown mechanism of Al2O3 based metal-to-metal antifuses

Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides

Behavior of the drain leakage current in metal-induced laterally crystallized thin film transistors

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Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors

Analog performance and application of graded-channel fully depleted SOI MOSFETs

A two dimensional analytical model for the current distribution in a lateral IGBT

A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique

A spectro-microscopic approach for spatially resolved characterisation of semiconductor structures in PEEM

A simulation study on pseudomorphic high electron mobility transistors (pHEMT) fabricated using the GaInP/InGaAs material system

A recombination- and trap-assisted tunneling model for stress-induced leakage current

A physics-based model for the substrate resistance of MOSFETs

A physical compact model for direct tunneling from NMOS inversion layers

A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted d-doped heterostructure field-effect transistor

A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation

FAQs

Solid-State Electronics has an SJR of 0,352 (best quartile Q3) in the CountryOfPapers database.

Immediate OA APC is not available (NPD).

The acceptance rate recorded for Solid-State Electronics is 25%.

Solid-State Electronics

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Researcher reviews

Best articles by citations

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