ISSN: 0038-1101

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Solid-State Electronics Q3 Unclaimed

Elsevier Ltd United Kingdom

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Solid-State Electronics is a journal indexed in SJR in Electronic, Optical and Magnetic Materials and Materials Chemistry with an H index of 105. It has an SJR impact factor of 0,348 and it has a best quartile of Q3. It is published in English. It has an SJR impact factor of 0,348.

Solid-State Electronics focuses its scope in these topics and keywords: effect, silicon, partial, growth, current, power, soi, implanted, n, dioxidethe, ...

Type: Journal

Type of Copyright:

Languages: English

Open Access Policy:

Type of publications:

Publication frecuency: -

Categories: Condensed Matter Physics (Q3) Electrical and Electronic Engineering (Q3) Electronic, Optical and Magnetic Materials (Q3) Materials Chemistry (Q3)

Price

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Inmediate OA

NPD

Embargoed OA

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Non OA

Metrics

0,348

SJR Impact factor

105

H Index

235

Total Docs (Last Year)

536

Total Docs (3 years)

4503

Total Refs

863

Total Cites (3 years)

530

Citable Docs (3 years)

1.59

Cites/Doc (2 years)

19.16

Ref/Doc

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Other journals with similar parameters

Electronic Materials Letters Q3
Journal of Laser Applications Q3
ECS Journal of Solid State Science and Technology Q3
Microelectronics Journal Q3
Physica Status Solidi (B): Basic Research Q3

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Aims and Scope

Best articles by citations

Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications

Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric

Experimental evaluation of device degradation subject to oxide soft breakdown

Analytical approximation of effective surface recombination velocity of dielectric-passivated p-type silicon

Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode

Electron transport in a model Si transistor

Novel four-peak or five-peak current-voltage characteristics for three negative differential resistance devices in series

Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing

The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Front-end process simulation

Organic thin film transistors: from active materials to novel applications

A physical compact model for direct tunneling from NMOS inversion layers

SHOW MORE ARTICLES

Extracting diffusion length using the single contact electron beam induced current technique

Fabrication and characterization of in situ-doped a-Si0.8C0.2 emitter bipolar transistors

Formation of atomically smooth, ultrathin oxides on Si(113)

On the structure of the recessed-channel MOSFET for sub-100 nm Si CMOS

Characterization of the properties of Mg-doped Al0.15Ga0.85N/GaN superlattices

Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs

Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot

MOSFET triggering silicon controlled rectifiers for electrostatic discharge protection circuits

Cycling effects in nitrogen doped tetrahedral amorphous carbon non-volatile memory cells

Optimum design of punch-through junction used in bipolar and unipolar high voltage power devices

A two dimensional analytical model for the current distribution in a lateral IGBT

A comparison of the kink effect in polysilicon thin film transistors and silicon on insulator transistors